Allicdata Part #: | BLF6G20-230PRN,112-ND |
Manufacturer Part#: |
BLF6G20-230PRN,112 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET LDMOS 65V 17DB SOT539A |
More Detail: | RF Mosfet LDMOS (Dual), Common Source 28V 2A 1.8GH... |
DataSheet: | BLF6G20-230PRN,112 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Transistor Type: | LDMOS (Dual), Common Source |
Frequency: | 1.8GHz ~ 1.88GHz |
Gain: | 17.5dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 2A |
Power - Output: | 65W |
Voltage - Rated: | 65V |
Package / Case: | SOT539A |
Supplier Device Package: | SOT539A |
Base Part Number: | BLF6G20 |
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:Transistors - FETs, MOSFETs - RF
The BLF6G20-230PRN,112 is a field effect transistor (FET) designed for radiofrequency (RF) applications. This FET is designed to operate at an extremely high frequency of 230 GHz and to provide a very low noise figure. It is specifically designed for use in low-noise high-frequency amplifiers, low-noise oscillators, and transverse-mode devices.
A field effect transistor (FET) is a type of transistor that uses an electric field to control the flow of electrical current. The BLF6G20-230PRN,112 is a metal oxide semiconductor (MOS) FET. In this type of FET, a source of electrons is placed near two layers of oxide which act as a gate. The oxide layers are electrically insulated and form an electric field. When a voltage is applied to the gate, the electric field causes electrons to move from the source to the drain, affecting the flow of current through the transistor.
The BLF6G20-230PRN,112 uses a two-gate MOS-FET structure. This structure is designed to provide improved performance characteristics compared to standard MOS-FET structures. The two-gate design has the advantage of having higher transconductance, wider gain bandwidth and improved isolation characteristics. As a result, the BLF6G20-230PRN,112 is capable of operating at much higher frequencies than a single-gate device. In addition, the two-gate structure allows for precise control over the device characteristics.
The BLF6G20-230PRN,112 is designed to operate in the 500 MHz to 230 GHz range. The device has a maximum drain-source voltage of 5 V, and a maximum drain current of 200 mA. The device has an on-resistance of 10 ohms, an off-resistance of 5 Mohms, and a noise figure of 0.9 dB. The device is able to produce a gain of up to 80 dB. Additionally, the device is rated to withstand a maximum junction temperature of 225°C.
The BLF6G20-230PRN,112 is specifically designed for use in very low noise RF applications. It is used in low noise amplifiers, oscillators, transverse-mode converters, and other RF applications. The high frequency and low noise operation of the device make it ideal for these types of applications. Additionally, the two-gate structure of the device allows for precise control over its characteristics.
In conclusion, the BLF6G20-230PRN,112 is a field effect transistor designed for radiofrequency applications. This FET is specifically designed for use in low-noise, high-frequency amplifiers, low-noise oscillators, and transverse-mode devices. The device is capable of operating at a frequency of 230 GHz and can provide a very low noise figure. The two-gate structure of the device allows for precise control over its characteristics, making it ideal for use in very low noise RF applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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BLF6G38-10G,118 | Ampleon USA ... | 23.7 $ | 100 | RF FET LDMOS 65V 14DB SOT... |
BLF6G38-10G,112 | Ampleon USA ... | 23.7 $ | 1000 | RF FET LDMOS 65V 14DB SOT... |
BLF6G22LS-40P,118 | Ampleon USA ... | 40.19 $ | 100 | RF FET LDMOS 65V 19DB SOT... |
BLF644PU | Ampleon USA ... | 103.4 $ | 57 | RF FET LDMOS 65V 23.5DB S... |
BLF647PS,112 | Ampleon USA ... | 149.83 $ | 19 | RF FET LDMOS 65V 17DB SOT... |
BLF6G38S-25,112 | Ampleon USA ... | 53.28 $ | 56 | RF FET LDMOS 65V 15DB SOT... |
BLF6G38LS-50,118 | Ampleon USA ... | 56.11 $ | 1000 | RF FET LDMOS 65V 14DB SOT... |
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BLF6G21-10G,135 | Ampleon USA ... | 19.62 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF6G21-10G,112 | Ampleon USA ... | 26.4 $ | 604 | RF FET LDMOS 65V 18.5DB S... |
BLF647P,112 | Ampleon USA ... | 149.83 $ | 2 | RF FET LDMOS 65V 18DB SOT... |
BLF6G27LS-40P,112 | Ampleon USA ... | 56.33 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
BLF6G13LS-250P,112 | Ampleon USA ... | 142.84 $ | 1000 | RF FET LDMOS 100V 17DB SO... |
BLF6G10L-40BRN,112 | Ampleon USA ... | 35.75 $ | 1000 | RF FET LDMOS 65V 23DB SOT... |
BLF6G22LS-40P,112 | Ampleon USA ... | 43.38 $ | 1000 | RF FET LDMOS 65V 19DB SOT... |
BLF6G38S-25,118 | Ampleon USA ... | 45.62 $ | 1000 | RF FET LDMOS 65V 15DB SOT... |
BLF6G27LS-40P,118 | Ampleon USA ... | 48.23 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
BLF6G27LS-40PGJ | Ampleon USA ... | 48.23 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
BLF6G27L-50BN,118 | Ampleon USA ... | 50.17 $ | 1000 | RF FET LDMOS 65V 16DB SOT... |
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BLF6G27-45,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
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