| Allicdata Part #: | 568-7549-ND |
| Manufacturer Part#: |
BLF645,112 |
| Price: | $ 102.52 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Ampleon USA Inc. |
| Short Description: | RF FET LDMOS 65V 16DB SOT540A |
| More Detail: | RF Mosfet LDMOS (Dual), Common Source 32V 900mA 1.... |
| DataSheet: |  BLF645,112 Datasheet/PDF |
| Quantity: | 1442 |
| 1 +: | $ 93.20220 |
| 10 +: | $ 88.79500 |
Specifications
| Series: | -- |
| Packaging: | Tray |
| Part Status: | Active |
| Transistor Type: | LDMOS (Dual), Common Source |
| Frequency: | 1.3GHz |
| Gain: | 16.5dB |
| Voltage - Test: | 32V |
| Current Rating: | 32A |
| Noise Figure: | -- |
| Current - Test: | 900mA |
| Power - Output: | 100W |
| Voltage - Rated: | 65V |
| Package / Case: | SOT-540A |
| Supplier Device Package: | LDMOST |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BLF645,112 is a high-power (400 watts) N-Channel Lateral Double Diffused MOSFET for use in RF and microwave power amplifiers. It has a maximum drain-source voltage rating of 100V, and a maximum drain current rating of 20A. This device is designed for use in wireless communication systems, both cellular and base stations.The working principle of the BLF645,112 is quite simple. When a voltage is applied to the gate of this MOSFET, it causes the drain current to increase. This increase in drain current is due to the presence of an electric field from the gate to the drain junction. This electric field acts to reduce or “pinch” the channel associated with the drain junction, thereby creating a smaller current carrying channel. This channel is known as a “depletion region” because it has fewer electrons than in the region surrounding it. As more voltage is applied to the gate of the MOSFET, the depletion region gets smaller and more current is allowed to flow through the drain junction.The BLF645,112 is widely used in RF and microwave applications, especially in cellular and base station communication systems. It is used in high power amplifiers, linear power amplifiers, switch mode power amplifiers, and power converters. It is also used in other applications such as antennas and antennas feed networks, satellite communication systems, and terrestrial wireless systems.The BLF645,112 has several advantages compared to traditional transistors. First, it has a low on-resistance, which means that it is capable of dissipating less power than traditional transistors and so it can be used in higher power applications. Second, because it has a very high current density, it can handle higher power levels than traditional transistors. Third, because it has a wide band gap and low gate capacitance, it does not suffer from the same kinds of frequency dependents losses seen in traditional transistors. Finally, it has a low noise figure, which makes it an ideal choice for low noise amplifier applications.In conclusion, the BLF645,112 is an ideal choice for applications which require high power and high efficiency. It is widely used in RF and microwave systems, both cellular and base station communication systems, and other applications such as antennas, feed networks, and converters. Its advantages include low on-resistance, high current density, wide band gap, low gate capacitance, and low noise figure.
The specific data is subject to PDF, and the above content is for reference
Related Products
Search Part number : "BLF6" Included word is 40
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| BLF6G15LS-40RN,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 22.5DB S... |
| BLF6G13L-250P,112 | Ampleon USA ... | 142.84 $ | 98 | RF FET LDMOS 100V 17DB SO... |
| BLF6G27-10G,118 | Ampleon USA ... | 21.89 $ | 1000 | RF FET LDMOS 65V 19DB SOT... |
| BLF6G27-10G,112 | Ampleon USA ... | 27.01 $ | 210 | RF FET LDMOS 65V 19DB SOT... |
| BLF6G10LS-200RN,11 | Ampleon USA ... | 60.17 $ | 1000 | RF FET LDMOS 65V 20DB SOT... |
| BLF6G10LS-200RN:11 | Ampleon USA ... | 70.13 $ | 97 | RF FET LDMOS 65V 20DB SOT... |
| BLF640U | Ampleon USA ... | 27.01 $ | 233 | RF FET LDMOS 65V 18.5DB S... |
| BLF642,112 | Ampleon USA ... | 46.57 $ | 137 | RF FET LDMOS 65V 19DB SOT... |
| BLF645,112 | Ampleon USA ... | 102.52 $ | 1442 | RF FET LDMOS 65V 16DB SOT... |
| BLF6G13LS-250PGJ | Ampleon USA ... | 134.62 $ | 1000 | RF FET LDMOS 100V 17DB SO... |
| BLF6G38-10G,118 | Ampleon USA ... | 23.7 $ | 100 | RF FET LDMOS 65V 14DB SOT... |
| BLF6G38-10G,112 | Ampleon USA ... | 23.7 $ | 1000 | RF FET LDMOS 65V 14DB SOT... |
| BLF6G22LS-40P,118 | Ampleon USA ... | 40.19 $ | 100 | RF FET LDMOS 65V 19DB SOT... |
| BLF644PU | Ampleon USA ... | 103.4 $ | 57 | RF FET LDMOS 65V 23.5DB S... |
| BLF647PS,112 | Ampleon USA ... | 149.83 $ | 19 | RF FET LDMOS 65V 17DB SOT... |
| BLF6G38S-25,112 | Ampleon USA ... | 53.28 $ | 56 | RF FET LDMOS 65V 15DB SOT... |
| BLF6G38LS-50,118 | Ampleon USA ... | 56.11 $ | 1000 | RF FET LDMOS 65V 14DB SOT... |
| BLF6G38LS-50,112 | Ampleon USA ... | 65.39 $ | 85 | RF FET LDMOS 65V 14DB SOT... |
| BLF6G21-10G,135 | Ampleon USA ... | 19.62 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
| BLF6G21-10G,112 | Ampleon USA ... | 26.4 $ | 604 | RF FET LDMOS 65V 18.5DB S... |
| BLF647P,112 | Ampleon USA ... | 149.83 $ | 2 | RF FET LDMOS 65V 18DB SOT... |
| BLF6G27LS-40P,112 | Ampleon USA ... | 56.33 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
| BLF6G13LS-250P,112 | Ampleon USA ... | 142.84 $ | 1000 | RF FET LDMOS 100V 17DB SO... |
| BLF6G10L-40BRN,112 | Ampleon USA ... | 35.75 $ | 1000 | RF FET LDMOS 65V 23DB SOT... |
| BLF6G22LS-40P,112 | Ampleon USA ... | 43.38 $ | 1000 | RF FET LDMOS 65V 19DB SOT... |
| BLF6G38S-25,118 | Ampleon USA ... | 45.62 $ | 1000 | RF FET LDMOS 65V 15DB SOT... |
| BLF6G27LS-40P,118 | Ampleon USA ... | 48.23 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
| BLF6G27LS-40PGJ | Ampleon USA ... | 48.23 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
| BLF6G27L-50BN,118 | Ampleon USA ... | 50.17 $ | 1000 | RF FET LDMOS 65V 16DB SOT... |
| BLF6G27L-50BN,112 | Ampleon USA ... | 53.94 $ | 1000 | RF FET LDMOS 65V 16DB SOT... |
| BLF6H10LS-160,118 | Ampleon USA ... | 57.22 $ | 1000 | RF FET LDMOS 104V 20DB SO... |
| BLF6H10LS-160,112 | Ampleon USA ... | 62.93 $ | 1000 | RF FET LDMOS 104V 20DB SO... |
| BLF6G10L-260PBM,11 | Ampleon USA ... | 78.3 $ | 1000 | RF FET LDMOS 65V SOT1110A... |
| BLF6G15LS-250PBRN: | Ampleon USA ... | 88.95 $ | 1000 | RF FET 65V 18.5DB SOT1110... |
| BLF6G15LS-250PBRN, | Ampleon USA ... | 93.7 $ | 1000 | RF FET 65V 18.5DB SOT1110... |
| BLF647PSJ | Ampleon USA ... | 136.11 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
| BLF6G15L-500H,112 | Ampleon USA ... | 243.31 $ | 1000 | RF FET LDMOS 100V 16DB SO... |
| BLF6G15LS-500H,112 | Ampleon USA ... | 243.31 $ | 1000 | RF FET LDMOS 100V 16DB SO... |
| BLF6G27-45,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
| BLF6G10-45,135 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 22.5DB S... |
Latest Products
MRF6S21050LR3
FET RF 68V 2.16GHZ NI-400RF Mosfet LDMOS...
MRF6S18060NR1
FET RF 68V 1.99GHZ TO270-4RF Mosfet LDMO...
MRF1550NT1
FET RF 40V 175MHZ TO272-6 WRAPRF Mosfet ...
MRF8S21100HSR3
FET RF 65V 2.17GHZ NI780SRF Mosfet LDMOS...
LET16060C
FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...
LET16045C
FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...