Allicdata Part #: | BLF6G27-10,118-ND |
Manufacturer Part#: |
BLF6G27-10,118 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET LDMOS 65V 19DB SOT975B |
More Detail: | RF Mosfet LDMOS 28V 130mA 2.5GHz ~ 2.7GHz 19dB 2W ... |
DataSheet: | BLF6G27-10,118 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 2.5GHz ~ 2.7GHz |
Gain: | 19dB |
Voltage - Test: | 28V |
Current Rating: | 3.5A |
Noise Figure: | -- |
Current - Test: | 130mA |
Power - Output: | 2W |
Voltage - Rated: | 65V |
Package / Case: | SOT-975B |
Supplier Device Package: | CDFM2 |
Base Part Number: | BLF6G27 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BLF6G27-10,118 is one of many high-frequency complementing transistors available on the market. Specifically, it is a lateral LDMOS (Lateral Diffused Metal Oxide Semiconductor) FET (Field Effect Transistor) which is suitable for both RF (radio frequency) and microwave applications. Let\'s take a closer look at the device, its applications, and its working principles.
In terms of its physical structure, the BLF6G27-10,118 is a laterally-diffused Metal Oxide Semiconductor structure and has a total gate width of 0.1 micrometers. In terms of its electrical characteristics, it has an output power of 27 dBm at 1.25 GHz, a maximum drain-source Vds of 30 Volts, and a maximum drain current of 30 Amps. Additionally, its transistor\'s noise figure is rated at 5 dB.
Due to its impressive electrical characteristics, the BLF6G27-10,118 can be used in many different RF or microwave applications. One such application is the amplification of radio-frequency signals in mobile communication systems, such as GSM or CDMA. The device is also suitable for applications such as amplifier stages for professional broadcasting and RF engineering systems. Moreover, it can be used in base station amplifiers, up-converters, and signal repeaters.
In terms of its working principles, the BLF6G27-10,118 device is a “depletion mode” type FET. This means that the default state of the device is in the "on" position, and the voltage at the gate pin is used to turn the transistor “on” and “off”. As electric current passes through the device, electric charges accumulate on the drain region and electric field becomes dominant. This creates a “channel” which allows current to flow between the source and drain, and the transistor is “on”. When the depletion mode device is in the “off” state, there is no field-effect and no current flows through the device.
In conclusion, the BLF6G27-10,118 is a laterally-diffused MOS FET which is suitable for RF and microwave applications. Primarily, this transistor is used in mobile communication transmission systems, professional broadcasting systems, base station amplifiers, up-converters, signal repeaters and more. Furthermore, this device operates using a depletion mode and is “on” by default, and “off” when there is no drain-to-source voltage present.
The specific data is subject to PDF, and the above content is for reference
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