DMG301NU-13 Allicdata Electronics

DMG301NU-13 Discrete Semiconductor Products

Allicdata Part #:

DMG301NU-13DITR-ND

Manufacturer Part#:

DMG301NU-13

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 25V .26A SOT-23
More Detail: N-Channel 25V 260mA (Ta) 320mW (Ta) Surface Mount ...
DataSheet: DMG301NU-13 datasheetDMG301NU-13 Datasheet/PDF
Quantity: 170000
1 +: $ 0.08000
10 +: $ 0.07760
100 +: $ 0.07600
1000 +: $ 0.07440
10000 +: $ 0.07200
Stock 170000Can Ship Immediately
$ 0.08
Specifications
Gate Charge (Qg) (Max) @ Vgs: 0.36nC @ 4.5V
Base Part Number: DMG301
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 320mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 27.9pF @ 10V
Vgs (Max): 8V
Series: --
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Rds On (Max) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The DMG301NU-13 is a transistor made from an N-Channel enhancement mode transistor, also known as a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). This type of transistor is a device that allows current to flow through a channel between two source and drain terminals. The flow of current is controlled by the gate terminal which is connected to the semiconductor. By controlling the voltage of the gate, the level of drain-source current can be regulated.

The DMG301NU-13 is ideal for applications such as high-speed switching, power switching, and low voltage switching applications. It has a low RDS(ON) value which reduces the amount of power needed to switch the device on. The low RDS(ON) also helps to keep the device in an on-state even when the input voltage is lower than the threshold. The device also has a low on-state resistance which allows it to switch more quickly and efficiently.

The working principle of the DMG301NU-13 revolves around its MOSFET technology. It has a gate terminal which is connected to a semiconductor material. By applying a voltage to the gate terminal, the flow of current between two source and drain terminals is controlled. The voltage applied to the gate determines the level of drain-source current. When the voltage is high, the DMG301NU-13 is switched to an on-state, allowing current to flow. When the voltage is low, the device is in an off-state, preventing current from flowing.

The DMG301NU-13 is a versatile device which is suitable for a variety of applications. It is suitable for high-speed switching, power switching and low voltage switching applications. It is also suitable for applications such as switched-mode power supplies and DC-DC converters. It is also an ideal choice for audio amplifiers, battery powered circuits and low noise applications.

The DMG301NU-13 is a versatile and high-performance device that is suitable for a wide range of applications. It is reliable and efficient and is capable of switching loads quickly and efficiently. It is also capable of withstanding high voltages and has a low on-state resistance. The device is an ideal choice for those looking for a reliable, high-performance transistor.

The specific data is subject to PDF, and the above content is for reference

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