Allicdata Part #: | DMG3414UQ-7-ND |
Manufacturer Part#: |
DMG3414UQ-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 20V 4.2A SOT23-3 |
More Detail: | N-Channel 20V 4.2A (Ta) 780mW Surface Mount SOT-23... |
DataSheet: | DMG3414UQ-7 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 900mV @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 780mW |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 829.9pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 9.6nC @ 4.5V |
Series: | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 8.2A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 4.2A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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.DMG3414UQ-7 is a single FET transistor (Field Effect Transistor). It is used in both analog and digital circuits, and falls under the category of MOSFETs (Metal Oxide Semiconductor Field Effect Transistors). It is capable of both high frequency switching and power control applications.
Application Field: The DMG3414UQ-7 is primarily used in power control and high frequency switching applications, such as lighting control, motor control, adjustable power supply and battery management. It has the added advantage that it can be implemented in a variety of circuit configurations with low capacitance and low on-state resistance. It is also popular in applications that require reverse biasing capabilities.
Working Principle: The DMG3414UQ-7 is mainly a MOSFET transistor. Its construction consists of a gate, a source and a drain. In order for current to flow through the device, the gate must be charged with voltage and current. This causes the MOSFET to be placed in a ‘conductive’ or ‘on’ state, and allows current to flow through. When current is not flowing through the device, it is placed in an ‘off’ state, where the gate and drain are isolated, and the MOSFET is not conductive.
One advantage of the DMG3414UQ-7 is its low threshold voltage. This means that it is able to switch on and off with minimal voltage, allowing for more efficient power control and switching applications. The device also has a low capacitance, which improves its switching speed and provides better signal transmission capabilities. Another advantage of the DMG3414UQ-7 is its reverse biasing capability. Due to its shallow junction depths, it allows for reverse current flow and thus can be used in a variety of reverse biasing applications. Finally, it has a low On-state resistance, which further reduces power consumption during operations.
Due to its multiple advantages, the DMG3414UQ-7 is a popular choice for modern circuits. It can be incorporated into a variety of circuit configurations to allow for more efficient and reliable power and signal management. By combining the advantages of a high frequency switching device and its low capacitance and low on-state resistance, it allows for a much more efficient energy management process.
The specific data is subject to PDF, and the above content is for reference
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