| Allicdata Part #: | DMG3414UQ-13-ND |
| Manufacturer Part#: |
DMG3414UQ-13 |
| Price: | $ 0.08 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | MOSFET N-CH 20V 4.2A SOT23-3 |
| More Detail: | N-Channel 20V 4.2A (Ta) 780mW Surface Mount SOT-23... |
| DataSheet: |  DMG3414UQ-13 Datasheet/PDF |
| Quantity: | 1000 |
| 10000 +: | $ 0.07354 |
| Vgs(th) (Max) @ Id: | 900mV @ 250µA |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SOT-23-3 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 780mW |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 829.9pF @ 10V |
| Vgs (Max): | ±8V |
| Gate Charge (Qg) (Max) @ Vgs: | 9.6nC @ 4.5V |
| Series: | Automotive, AEC-Q101 |
| Rds On (Max) @ Id, Vgs: | 25 mOhm @ 8.2A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 4.2A (Ta) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The DMG3414UQ-13 from Diodes Incorporated is a N-channel enhancement mode MOSFET offering high voltage and low on-resistance. It has a drain-source breakdown voltage of +450V, which allows for reliable and robust operation in switch mode AC/DC and DC/DC applications. This product is suitable for use as a load switch, general purpose DC/AC converter, and automotive load switch.
MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) are unipolar transistors which uses an electron channel between the drain and source terminal. In an N-channel MOSFET, the channel is made up of a majority of electrons providing a current path between drain and source, and are commonly used as a switching device. N-channel MOSFET, like the DMG3414UQ-13, works by using an applied voltage to the gate controlling the channel size, hence, the resistance between the drain and source terminals.
The DMG3414UQ-13 operates with a gate-source voltage of +2.2V to +8V and is rated for a drain current of 15A at +25°C. The device is provided in a compact 8-pin Power Dissipating (TO-252) package. It also offers excellent temperature capability, operating temperature range of -55°C to +150°C. It also have a relatively low on resistance of 5.6mΩ and high frequency operation up to 25MHz, making the device suitable for high frequency signal and power applications.
The device has a wide range of applications in motor control, home appliances, and general AC/DC and DC/DC conversion. It is also well suited for switch mode high voltage DC/DC converters and automotive load switch or low power signal switch applications.
In conclusion, the DMG3414UQ-13 from Diodes Incorporated is a high voltage N-channel enhancement mode MOSFET offering low on-resistance and excellent frequency operation up to 25MHz. It has a wide range of applications in motor control, home appliances, and AC/DC and DC/DC conversion, making it a suitable device for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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