Allicdata Part #: | DMG3414U-7DITR-ND |
Manufacturer Part#: |
DMG3414U-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 20V 4.2A SOT23 |
More Detail: | N-Channel 20V 4.2A (Ta) 780mW (Ta) Surface Mount S... |
DataSheet: | DMG3414U-7 Datasheet/PDF |
Quantity: | 33000 |
Vgs(th) (Max) @ Id: | 900mV @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 780mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 829.9pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 9.6nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 8.2A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 4.2A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMG3414U-7 is a single N-Channel Enhancement-Mode Field Effect Transistor (FET) designed for small-signal and switch applications. It is built with a Si FET process and has good switching performance and low on-resistance. This FET is specially designed for use in high-temperature applications such as automotive, telecom, and military. It is available as an SC-59 or TO-220 or TO-252 package.
The DMG3414U-7 offers several advantages over other MOSFET transistors. It has a low gate input capacitance and low output capacitance which allow it to operate at very high speeds. It also has a rugged construction and is designed to operate in high temperatures. In addition, it has a low on-resistance which reduces power loss and increases efficiency. Finally, it has a low leakage current which further reduces power loss.
The main application of the DMG3414U-7 is as a switch for various high-power applications. It is frequently used to control the switching of power from a power supply to an output device, such as a motor or a portion of an LED display. It is also used in power converters, power mixers, and other applications that require high efficiency, high speed switching. In these systems, the DMG3414U-7 is often used in conjunction with MOSFET drivers for additional control of the switching operation.
The working principle of the DMG3414U-7 is based on the fact that it is an "enhancement-mode" FET. This means that, when a voltage is applied to the gate, a current flows through the transistor. This current then causes the transistor to open and allow a current to flow between the drain and the source. The higher the voltage applied to the gate, the greater the current will be. This current can then be used to switch devices connected to the drain and source of the FET.
The DMG3414U-7 is an example of a single enhancement-mode FET. These types of transistors are ideal for high-power, high-efficiency switching applications. With its low on-resistance, low input and output capacitance, and high temperature capability, the DMG3414U-7 can provide reliable and efficient switching in a variety of high-power applications.
The specific data is subject to PDF, and the above content is for reference
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