DMG3418L-7

Gate Charge (Qg) (Max) @ Vgs:	5.5nC @ 4.5V
Base Part Number:	DMG3418
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.4W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	464.3pF @ 15V
Vgs (Max):	±12V
Series:	--
Vgs(th) (Max) @ Id:	1.5V @ 250µA
Rds On (Max) @ Id, Vgs:	60 mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	4A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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.DMG3418L-7 Application Field and Working PrincipleThe DMG3418L-7 is a N-channel enhancement mode MOSFET transistor from Diodes Inc., which is widely used in power supply applications and other power switching circuits. It is suitable for switching and low noise amplification applications. It is closely related to other MOSFET transistors like the DIG3414, DIG3415 and DIG3614N.The DMG3418L-7 is an enhancement mode, N-channel MOSFET transistor with an advanced process that provides on-resistance and thermal performance superior to other transistors. It is available in three footprints, including single, dual and three devices. The DMG3418L-7 offers low on-resistance and fast switching, making it ideal for high-speed switching applications such as switching power supplies, DC-DC converters and general-purpose switching.The DMG3418L-7 is an advanced power MOSFET, which means it has a switching speed significantly faster than regular MOSFETs. It is characterized by low gate charge and low on-resistance to reduce conduction losses. It also has built-in electrostatic discharge (ESD) protection and a negative gate-to-source voltage (Vgs) to ensure that a robust on/off switch is maintained.The basic working principle of the DMG3418L-7 is relatively simple. When the gate of the transistor is given a positive voltage, electrons are repelled from the gate, creating a conductive channel between the source and the drain. The source and drain then become connected, allowing current to flow through the transistor.The DMG3418L-7 is an excellent choice for power supply applications, such as voltage regulators, DC-DC converters, switching power sources and DC-AC inverters. It is also suitable for use in general-purpose power switching circuits and low noise amplifier circuits. The device can be used in applications such as motor control, lighting control and load switching.In conclusion, the DMG3418L-7 is an advanced N-channel MOSFET that offers superior performance and reliability in a variety of power switching applications. It is characterized by low on-resistance and fast switching, enabling it to meet the most demanding requirements. Its wide variety of footprints make it suitable for use in a variety of applications, including switcher power supplies, voltage regulators and low noise amplifiers. As a result, it is one of the most popular transistors in use today.

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