| Allicdata Part #: | DMG3415UFY4Q-7DITR-ND |
| Manufacturer Part#: |
DMG3415UFY4Q-7 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | MOSFET P-CH 16V 2.5A X2-DFN2015 |
| More Detail: | P-Channel 16V 2.5A (Ta) 650mW (Ta) Surface Mount X... |
| DataSheet: |  DMG3415UFY4Q-7 Datasheet/PDF |
| Quantity: | 3000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 16V |
| Current - Continuous Drain (Id) @ 25°C: | 2.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs: | 39 mOhm @ 4A, 4.5V |
| Vgs(th) (Max) @ Id: | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 4.5V |
| Vgs (Max): | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds: | 282pF @ 10V |
| FET Feature: | -- |
| Power Dissipation (Max): | 650mW (Ta) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | X2-DFN2015-3 |
| Package / Case: | 3-XDFN |
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The DMG3415UFY4Q-7 is a single-gate, high-voltage field-effect transistor (FET) used in applications requiring a high-voltage switching device. It is used in applications such as power supply protection, automotive applications, or for controlling high-voltage loads such as motors, solenoids, and relays. This FET uses ultra-low gate charge technology to reduce power consumption, enabling superior performance and regulation.
The working principle of the DMG3415UFY4Q-7 is based on a structure known as the Metal Oxide Semiconductor Field Effect Transistor (MOSFET). This structure utilizes a metal gate electrode that is separated from the conducting channel by a thin insulating layer of metal oxide. When a voltage is applied to the metal gate, a current will flow through the conducting channel, allowing current to flow between the source and drain connections. The electrical characteristics of the MOSFET can be modified by changing the size of the gate electrode and the thickness of the metal oxide layer.
The DMG3415UFY4Q-7 offers high channel conductance, low on-resistance, and fast switching speeds. It has high avalanche energy rating and reverse blocking capability, making it suitable for use in applications such as high-voltage switching. It has a wide operating temperature range from -55°C to 150°C, making it suitable for use in automotive applications. In addition, it is designed for ruggedness and mechanical reliability, making it suitable for applications in harsh environments.
The DMG3415UFY4Q-7 is an ideal choice for applications requiring a high-voltage switching device. Its low gate charge technology and rugged design make it suitable for use in automotive, industrial, and power supply protection applications. Its high channel conductance and low on-resistance provide superior performance and regulation. Its wide operating temperature range enables it to be used in applications requiring high temperature operation and its reverse blocking capability makes it suitable for applications such as high-voltage motor control.
The specific data is subject to PDF, and the above content is for reference
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