Allicdata Part #: | DMG302PU-13DITR-ND |
Manufacturer Part#: |
DMG302PU-13 |
Price: | $ 0.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET P-CH 25V .17A SOT-23 |
More Detail: | P-Channel 25V 170mA (Ta) 320mW (Ta) Surface Mount ... |
DataSheet: | DMG302PU-13 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.08320 |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 320mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 27.2pF @ 10V |
Vgs (Max): | 8V |
Gate Charge (Qg) (Max) @ Vgs: | 0.35nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 10 Ohm @ 200mA, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.7V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 170mA (Ta) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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DMG302PU-13 is a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET), which is a type of transistor used to control and switch electric signals. This particular MOSFET is what is known as a “Single” type, meaning it has only one gate input, which is used to manipulate the flow of current through the device. It is a high-power, high-frequency transistor, which makes it well-suited to a wide range of applications.
A MOSFET works by having two “leads” which allow electric current to flow through the device. The leads are connected to a “gate” which is the input to the transistor. When a voltage is applied to the gate, it creates an electric field, which changes the behavior of the electronic charge carriers in the semiconductor, thus allowing current to either be blocked or allowed to flow freely. This makes MOSFETs ideal for a variety of different kinds of switching and logic circuits.
The DMG302PU-13 is a power MOSFET with a breakdown voltage of 13V and a drain-source current rating of 30A. This makes it suitable for use in a variety of power applications, such as DC-DC converters, motor control circuits and lighting applications. It is also capable of switching fast signals up to 10MHz, making it suitable for use in microwave, RF and other high-frequency applications. The device is constructed using an advanced planar technology, providing high gate charge, fast switching and low on-state resistance.
In terms of performance, the DMG302PU-13 can handle up to 30A continuous drain current and can switch signals up to 10MHz with minimal noise and distortion. Its advanced planar technology also allows it to be offered in low-profile packages, making it ideal for dense printed circuit boards. Additionally, it has a high input impedance, low input capacitance and fast switching times, all of which make it well-suited to a variety of different applications.
In summary, the DMG302PU-13 is a high-power, high-frequency, single MOSFET transistor with an array of features which make it suitable for a wide range of applications. It has a breakdown voltage of 13V, a drain-source current rating of 30A and can switch signals up to 10MHz. It is constructed using an advanced planar technology, and offers a high input impedance, low input capacitance, fast switching times and a low-profile package, making it ideal for dense printed circuit boards.
The specific data is subject to PDF, and the above content is for reference
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