Allicdata Part #: | DMG3N60SJ3-ND |
Manufacturer Part#: |
DMG3N60SJ3 |
Price: | $ 0.43 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET BVDSS: 501V 650V TO251 |
More Detail: | N-Channel 650V 2.8A (Tc) 41W (Tc) Through Hole TO-... |
DataSheet: | DMG3N60SJ3 Datasheet/PDF |
Quantity: | 1000 |
75 +: | $ 0.39035 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-251-3, IPak, Short Leads |
Supplier Device Package: | TO-251 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 41W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 354pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 12.6nC @ 10V |
Series: | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs: | 3.5 Ohm @ 1.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.8A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The DMG3N60SJ3 is a N-channel enhancement-mode MOSFET (metal-oxide semiconductor field effect transistor). In its steady state, the MOSFET works with a small voltage applied to the gate, controlling the flow of current between the drain and source. The DMG3N60SJ3 features a very low on-resistance and low gate charge, making it suitable for applications with high frequencies, fast switching, and/or high current overloads.
The DMG3N60SJ3 provides good power dissipation and low gate threshold. With an RDS(ON) of 0.45 ohms, it can support the load of up to 250V, which makes it suitable for appliances and large-current applications, such as industrial motor drives, automotive systems, and home appliances.
The DMG3N60SJ3 operates in linear mode when the gate-source voltage is between 0V and 4.5V. When this voltage is higher than 4.5V, the gate-drain voltage must be high enough to saturate the device. This high voltage is referred to as the threshold voltage of the MOSFET.
The DMG3N60SJ3 operates in the enhancement mode at normal gate voltages. This means that the current between the drain and source is enhanced when the gate voltage is increased. The maximum current that can be passed between the two is dependent on the operating voltage and drain current, with the maximum drain current being 300A.
The DMG3N60SJ3 also features a low input capacitance, which makes it suitable for high frequency switching applications like switchmode power supplies and inverters. The low input capacitance reduces the power loss and increases the switching speed. The low gate charge also helps in smooth switching of the device.
The DMG3N60SJ3 is primarily suitable for high voltage and high temperature applications. Its low on-resistance makes it ideal for applications that require efficient heat and power dissipation. Its low gate charge reduces the power required to switch it on and off, making it suitable for applications that are voltage-sensitive and require a wide range of input voltage swing.
Because of its low input capacitance, the DMG3N60SJ3 is also suitable for pulse-width modulation (PWM) control applications. The device can accurately control the amount of current delivered to the load within a defined period of time and therefore can be used to control the speed, torque and power of motors, which makes it suitable for applications such as motor drives, power supplies, and robotic systems.
Overall, the DMG3N60SJ3 is an attractive choice for applications that require high voltage, high temperature, and high current capability. With its low on-resistance and low gate charge, it provides efficient heat and power dissipation and its low input capacitance makes it suitable for high frequency switching applications. It is therefore best suited for industrial, automotive, and home appliance applications that require highly efficient switching.
The specific data is subject to PDF, and the above content is for reference
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