DMG3413L-7 Allicdata Electronics
Allicdata Part #:

DMG3413L-7DITR-ND

Manufacturer Part#:

DMG3413L-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET P-CH 20V 3A SOT23
More Detail: P-Channel 20V 3A (Ta) 700mW (Ta) Surface Mount SOT...
DataSheet: DMG3413L-7 datasheetDMG3413L-7 Datasheet/PDF
Quantity: 19
Stock 19Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 700mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 857pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 95 mOhm @ 3A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The DMG3413L-7 is an N-channel logic level enhancement mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is a type of field-effect transistor commonly used for switching and amplifying electrical signals. MOSFETs are especially useful for high power, low voltage applications and are preferred over other types of transistors due to their high frequency response, low on-resistance, radial and low cost.

The DMG3413L-7 is designed and manufactured to provide exceptional performance and long life even in challenging and extreme environments. Since it is able to operate at low voltage while providing high power, it is particularly well-suited for applications such as motor and power control. It is also perfect for applications that involve switching and amplifying signals with high frequency signals such as RF communication.

The working principle of the DMG3413L-7 is based on the gates. Two gates, the “source” and the “drain” are the inputs of the MOSFET and the voltage applied across them, depends on the type of MOSFET (N-channel or P-channel). A positive voltage applied to the source increases the current flow from the source to the drain, while a negative voltage applied to the source decreases it. The drain is also connected to a power source, controlling the current flow in the MOSFET.

The DMG3413L-7 offers features such as fast switching, ESD protection and low on-resistance. This MOSFET is a long-lasting and reliable source of power, making it ideal for many different applications. It is most commonly used in power control, motor drive, automotive systems and RF communications.

The DMG3413L-7 is a versatile and reliable MOSFET for many different types of applications. It is easy to use and maintain, and it is often used in high power, low voltage situations. With its high frequency response and low on-resistance, it is perfect for switching and amplifying high frequency signals, such as RF communication. In addition, it provides fast switching and ESD protection, making it an ideal power source for many different types of applications. The DMG3413L-7 is the perfect choice for any application where reliability and performance are essential.

The specific data is subject to PDF, and the above content is for reference

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