Allicdata Part #: | DMG4800LSD-13DITR-ND |
Manufacturer Part#: |
DMG4800LSD-13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET 2N-CH 30V 7.5A 8SO |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 7.5A 1.17W Sur... |
DataSheet: | DMG4800LSD-13 Datasheet/PDF |
Quantity: | 40 |
Vgs(th) (Max) @ Id: | 1.6V @ 250µA |
Base Part Number: | DMG4800LSD |
Supplier Device Package: | 8-SOP |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 1.17W |
Input Capacitance (Ciss) (Max) @ Vds: | 798pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs: | 8.56nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 16 mOhm @ 9A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.5A |
Drain to Source Voltage (Vdss): | 30V |
FET Feature: | Logic Level Gate |
FET Type: | 2 N-Channel (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMG4800LSD-13 (also known as MegaFET™ Array) is a type of semiconductor device that combines several independent transistors together on a single integrated circuit. The device is composed of a number of power MOSFETs configured as an array, and has superior performance when compared to traditional single transistors. In this article, we will discuss the application field and working principle of the DMG4800LSD-13.
The DMG4800LSD-13 is primarily used as an output driver in applications such as DC/DC converters and peak to peak load switching applications. It is widely used in industrial applications, as the array consists of several transistors, allowing for a greater output current and higher peak-to-peak load switching capabilities. Additionally, the device is typically used in motor and solenoid control applications, providing the user with increased flexibility and error reduction.
The DMG4800LSD-13 consists of four power MOSFETs that are arranged as two separate differential pairs. Each pair consists of two transistors in parallel and is rated for up to 8 A of continuous output current. When the gate voltage is applied, the drain-source path of the respective transistor is enabled, thus allowing current to flow between the drain and source. The device can be used in both high-side and low-side switching applications, depending on the user’s needs.
The DMG4800LSD-13 has a wide operational range, and can handle up to a maximum of 60 V in both high-side and low-side switching applications. The device is also able to withstand high temperature and high voltage conditions, making it ideal for heavy-duty applications. Furthermore, the device can switch power up to 6 MHz, allowing for fast switching times when compared to conventional transistors.
The DMG4800LSD-13 also offers a number of protection features that help ensure safety when used in mission critical applications. The device has thermal protection, overcurrent protection and reverse voltage protection, ensuring that the device is not damaged by electrical mishaps and excess load conditions. Additionally, the built-in ESD protection protects the unit from electrostatic discharge, making it suitable for use in environments where electrostatic discharge is a concern.
The DMG4800LSD-13 can be used in a variety of applications, including HVAC, solar, industrial and automotive. The device is suitable for use in a range of applications, making it an invaluable component in a wide variety of systems. Due to its superior performance and robust protection features, the DMG4800LSD-13 is the perfect choice for applications where reliability and safety are a must.
In conclusion, the DMG4800LSD-13 is a great device for a wide range of applications. It combines four MOSFETs in an array, allowing for a higher output current, high-side and low-side switching capabilities, and superior protection features. The device is commonly used in industrial, automotive and solar systems, and the wide operational range makes it suitable for a variety of systems. Additionally, the device offers superior performance when compared to traditional single transistors, making it the perfect choice for applications where reliability and safety are paramount.
The specific data is subject to PDF, and the above content is for reference
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