Allicdata Part #: | DMG4822SSDQ-13DITR-ND |
Manufacturer Part#: |
DMG4822SSDQ-13 |
Price: | $ 0.27 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFETDUAL N-CHAN 30VSO-8 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 10A (Ta) 1.42W... |
DataSheet: | DMG4822SSDQ-13 Datasheet/PDF |
Quantity: | 2500 |
2500 +: | $ 0.23637 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Ta) |
Rds On (Max) @ Id, Vgs: | 21 mOhm @ 8.5A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 478.9pF @ 16V |
Power - Max: | 1.42W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
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The DMG4822SSDQ-13 is a transistor array device, also often known as a field effect transistor (FET) or a metal oxide semiconductor FET (MOSFET). In practical terms, it can be used to switch high frequency AC or DC signals quickly and reliably. This article will explore the application fields and working principle of the DMG4822SSDQ-13.
Overview of DMG4822SSDQ-13
The DMG4822SSDQ-13 is a monolithic high speed CMOS N-Channel MOSFET array with 2 independent control gates. It is a dual-channel, double-gate array with an integrated pull-up resistor for both channels. It is also capable of operating at low supply voltage and support high speed Rise-Time and Fall-Time transistors.
It offers superior dynamic performance, with a typical Rise-Time of 3.5 ns and a typical Fall-Time of 2.4 ns. It also provides high power operation, with a maximum peak current capability of 11A. Additionally, it is capable of supporting up to 18 V of gate-source voltage, providing a greater degree of flexibility in terms of signal management and handling.
Application Fields
The DMG4822SSDQ-13 is typically used in applications requiring high speed switching of AC and/or DC signals, such as digital power supply designs and power management circuits. It is also often used in high frequency communication systems, such as fiber and 4G/5G networks, as well as in consumer electronic applications, such as flat panel displays, audio amplifiers, and motor drivers.
Furthermore, the DMG4822SSDQ-13 can be used in industrial applications, such as industrial process control and automotive applications, where high speed signal transmission and power management are required. Additionally, it can be used in medical equipment and laboratory analysis, as well as in research and development.
Working Principle
At a fundamental level, the working principle of the DMG4822SSDQ-13 is the same as that of an ordinary field effect transistor. In this type of device, an electric field is generated between the two terminals on one side, and a voltage is applied to the gate terminal (G)on the other side. This electric field controls the flow of electrons across the FET in relation to the voltage of the gate terminal.
In the case of the DMG4822SSDQ-13, high speed switching of AC or DC signals is enabled by the integrated pull-up resistor for both channels. When a small voltage is applied to the gate terminal (G), the resistor pulls current between the two terminals and creates a flow of electrons across the FET, thus allowing the signal to be quickly and reliably switched.
Conclusion
The DMG4822SSDQ-13 is a versatile and robust transistor array that is designed to quickly and reliably switch high frequency AC or DC signals. It can be used in a variety of applications, ranging from digital power supplies to fiber and 4G/5G networks, and it is capable of providing reliable operation even at low supply voltages.
At its core, the working principle of the DMG4822SSDQ-13 is based on the same principles that are used in all field effect transistors. In this type of device, an electric field is created between the two terminals when a voltage is applied to the gate terminal, allowing for the rapid and reliable switching of AC and DC signals.
The specific data is subject to PDF, and the above content is for reference
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