| Allicdata Part #: | DMG4N60SK3-13DITR-ND |
| Manufacturer Part#: |
DMG4N60SK3-13 |
| Price: | $ 0.27 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | MOSFET BVDSS: 501V 650V TO252 T& |
| More Detail: | N-Channel 600V 3.7A (Tc) 48W (Ta) Surface Mount TO... |
| DataSheet: |  DMG4N60SK3-13 Datasheet/PDF |
| Quantity: | 1000 |
| 2500 +: | $ 0.24162 |
Specifications
| Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | TO-252 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 48W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 532pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 14.3nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 2.3 Ohm @ 2A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 3.7A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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The DMG4N60SK3-13 offers reliable operation in a variety of applications and it is one of the most popular types of Field Effect Transistors (FETs) on the market. This type of transistor is known for its high performance and its ability to provide high power output.The DMG4N60SK3-13 is a single, N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor), with a maximum drain source voltage of 600 Volts and a gate threshold voltage of 4 Volts. It is rated for about 4 Amps continuous drain current and a maximum continuous power dissipation of 13 Watts at a case temperature of 25°C.The DMG4N60SK3-13 has many practical applications as a switch, an amplifier and a power control element. As a switch, it is capable of switching large currents very quickly and efficiently in a wide range of AC and DC supplies, allowing for power control and reliability. As an amplifier, the DMG4N60SK3-13 is ideal for low power signals where the power amplifier can be used to increase the signal strength of the incoming signal. The DMG4N60SK3-13 can also be used as a power control element, allowing for increased efficiency and less waste of power when operating in heavy-duty applications.The working principle of the DMG4N60SK3-13 is based on the presence of an insulated gate. This gate, when connected to a supply voltage, polarizes the source-drain region of the FET due to the electrostatic field created. This polarization in turn modulates the conductance of the channel, producing an ON/OFF type operation. This ON/OFF cycling results in an ON current, when the applied voltage exceeds the threshold voltage of the device and an OFF current, when the voltage decreases below the threshold voltage.The DMG4N60SK3-13 is also very efficient, requiring relatively low currents to activate and the inherent insulation of the MOSFET technology decreases the amount of power lost when operating the FET. This makes the DMG4N60SK3-13 an ideal solution for a wide range of applications.The DMG4N60SK3-13 is reliable, efficient and easy to use, making it a popular choice in many applications. It offers a wide variety of benefits to users, from increased reliability and improved performance, to energy saving. The DMG4N60SK3-13 is an ideal choice for applications requiring a fast, reliable switching and power control solution.
The specific data is subject to PDF, and the above content is for reference
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