Allicdata Part #: | DMG4406LSS-13DITR-ND |
Manufacturer Part#: |
DMG4406LSS-13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N CH 30V 10.3A 8-SO |
More Detail: | N-Channel 30V 10.3A (Ta) 1.5W (Ta) Surface Mount 8... |
DataSheet: | DMG4406LSS-13 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1281pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 26.7nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 11 mOhm @ 12A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 10.3A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The DMG4406LSS-13 is a type of single field-effect transistor (FET). The FET is an active semiconductor device that is mostly found in the core of modern electronics and integrated circuits. FETs are used to amplify, switch and control the transmission of electric current. They are the most power efficient and the smallest form of transistors.
The DMG4406LSS-13 is a high power N-channel MOSFET and is most commonly used in applications that need to regulate pre-amplification processes, such as in audio amplifiers and power supplies. The maximum allowable voltage for the DMG4406LSS-13 is up to 100V, with a maximum drain source voltage of 100V and a drain current rating of 16A.
The DMG4406LSS-13 works by using an N-Channel MOSFET. The N-Channel MOSFET is composed of four regions – source, drain, channel and gate. When the gate voltage is applied, it attracts the electrons toward the gate region (channel region), thus allowing a current to pass between the source and drain region. The strength of the current flow is varied by adjusting the gate voltage level.
The MOSFET is widely used in switching applications as well as for power amplification. It performs much better than the ordinary field-effect transistor (FET) in terms of speed, power efficiency and low input capacitance. This makes it an ideal choice for audio amplifiers, power amplifiers, loudspeakers, switches and solenoids.
The DMG4406LSS-13 is a versatile device due to its low On resistance, high current gain and high voltage tolerance. This makes it suitable for a wide range of applications, including audio components, power supplies, motor controllers and other high-current applications.
The DMG4406LSS-13 has a robust die construction which ensures reliable operation. It also features a superior thermal resistance which ensures better heat dissipation and lower operating temperatures. Additionally, the DMG4406LSS-13 is designed to operate at high frequencies, making it suitable for high-speed data communications and audio control.
In conclusion, the DMG4406LSS-13 is a highly efficient and reliable single field-effect transistor (FET) ideal for applications that require high power, low On resistance, high current gain and high voltage tolerance. It is suitable for use in audio components, power supplies, motor controllers and other high-current applications.
The specific data is subject to PDF, and the above content is for reference
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