DMG4800LK3-13

Vgs(th) (Max) @ Id:	1.6V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	TO-252-3
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.71W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	798pF @ 10V
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	8.7nC @ 5V
Series:	--
Rds On (Max) @ Id, Vgs:	17 mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	10A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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DMG4800LK3-13 is a depletion type Metal Oxide Field Effect Transistor (MOSFET). It is a single product that is manufactured with advanced technologies to meet the latest technology requirements. It is an important type of power semiconductor device for modern electronic applications.The DMG4800LK3-13 is engineered to be used in areas up to 1000V, allowing it to be used in applications that require high voltage. It is designed to be connected directly to the power bus, minimizing power losses and providing a cost effective solution. Its high voltage rating ensures that it can be used in both low and high voltage systems.This MOSFET has an operating voltage of 0.24V. This low voltage allows it to be used in systems that require low power consumption and fast switching times. The low power consumption also makes it an extremely efficient device, reducing the overall system cost.The DMG4800LK3-13 features a P-channel structure. This makes it an ideal choice for applications requiring low voltage switching and high speed switching, such as motor control, switching power supply design, and high voltage power converters.One of the main characteristics of this device is its high reliability. Its high performance is maintained over a wide range of operating conditions. This low power consumption makes this device an excellent choice for applications that require continuous operation.The DMG4800LK3-13 features a standard MOSFET structure, which allows it to provide superior performance in applications requiring high accuracy and high power handling. This single device offers a low on-resistance and high switching speed.The DMG4800LK3-13 also has an excellent thermal management. It is designed to safely operate in an ambient temperature range between 0 and 125C. This ensures that the device is reliable and safe to use in a variety of applications.The DMG4800LK3-13 is a highly efficient, reliable, and cost effective MOSFET device, making it an ideal choice for a wide variety of applications. It is suitable for use in commercial, industrial, and military applications.The DMG4800LK3-13 is an ideal choice for applications that require low voltage switching, fast switching times, and high current handling. It is a cost-effective solution for applications operating in low and high voltage areas, including motor control, switching power supply design, and high voltage power converters.Its low power consumption coupled with its high performance and efficiency make the DMG4800LK3-13 an ideal choice for applications requiring continuous operation. Its excellent thermal management ensures that the device works reliably and safely in a variety of applications.In conclusion, the DMG4800LK3-13 is a depletion type Metal Oxide Field Effect Transistor (MOSFET) with a standard MOSFET structure. It is reliable, efficient, and cost-effective, making it an ideal choice for a wide variety of applications, such as motor control, switching power supply design, and high voltage power converters. It is also suitable for use in commercial, industrial, and military applications.

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