Allicdata Part #: | DMG4N60SCT-ND |
Manufacturer Part#: |
DMG4N60SCT |
Price: | $ 0.57 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET NCH 600V 4.5A TO220 |
More Detail: | N-Channel 600V 4.5A (Ta) 113W (Ta) Through Hole TO... |
DataSheet: | DMG4N60SCT Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 0.51937 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 113W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 532pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 14.3nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 2.5 Ohm @ 2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A (Ta) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The DMG4N60SCT is a 600V N-channel enhancement mode Field Effect Transistor (FET). It is a state of the art transistor featuring excellent performance and very low on-resistance. The DMG4N60SCT can be used in a variety of applications where high power and low on-resistance are desired.The DMG4N60SCT is a MOSFET or metal-oxide-semiconductor FET. It is a type of field effect transistor (FET) comprised of a metal gate on top of a drain-source channel that is connected to a substrate. When an electrical signal is applied to the gate, a field is created in the channel and the current flow is proportional to the applied electric field. This enable the transistors to be used to control high current and/or voltage. The main application of the DMG4N60SCT is as an efficient switch in power conversion systems. It can be used in converters that uses voltage step up, voltage step down, or both. It can also be used in motor controllers and other switching power supplies. The DMG4N60SCT is also used in DC to AC inverters and could be used in any application that requires high current switching.The DMG4N60SCT also has many advantages which make it a great choice for any application. These advantages include a low on-resistance (RDS(on)), low gate charge, low input capacitance, fast switching time, and good reverse body diode characteristics. The low RDS(on) ensures that the FET will have a very low voltage drop when conducting current, resulting in higher efficiency. The low gate charge ensures that the power requirements for switching are kept to a minimum. The low input capacitance ensures that the FET will switch quickly when the gate voltage is applied, increasing reliability and efficiency. The reverse body diode characteristics ensures that the FET will be able to absorb the energy from the inductive load in the application, reducing the amount of components needed. In conclusion, the DMG4N60SCT is a great choice for any application that requires fast switching, high current and/or voltage, low voltage drop, and a low gate charge. It is an efficient and reliable solution that can be used variety of applications.
The specific data is subject to PDF, and the above content is for reference
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