DMG4413LSS-13

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The DMG4413LSS-13 is an efficient and reliable integrated circuit for a variety of applications. It is a single-channel medium-voltage MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that is designed for use in switching power supplies, DC/DC converters, and other applications where switching, isolation, and noise immunity are needed. The DMG4413LSS-13 offers a high on-resistance, low input capacitance, and fast switching speed that make it suitable for medium-voltage applications

The DMG4413LSS-13 features a reliable lateral Schottky field-effect transistor (FET) construction, along with several key design features that contribute to its excellent performance. The device is built with a common-source drain-gate structure, which is a common configuration for FETs, and uses a polyamide-imide dielectric material to minimize resistance while still providing isolation. The gate is driven by a Vgs signal, which is applied to the gate by a shielded input or gate drive circuit. The gate signal is then connected to the drain for operation of the FET. Additionally, the DMG4413LSS-13 employs a Schottky barrier to minimize leakage current and maximize the drain-to-source breakdown voltage.

The working principle of the DMG4413LSS-13 is based on the conventional operation of FETs. The gate terminal is used to control the flow of current between the source and the drain. When a positive voltage is applied to the gate terminal relative to the source, a strong electric field is created, which attracts electrons from the source to the gate and creates a channel of conducting electrons across the dielectric. This is known as the inversion layer and it allows current to flow freely between the source and drain. When the gate voltage is returned to zero, the electric field is removed and the electrons move away from the gate, resulting in a fully non-conductive state.

The DMG4413LSS-13 employs a number of design features that make it well-suited for use in medium-voltage switching applications. The device has a low “on-resistance” rating, which is the amount of resistance that the device presents when it is in the on condition. This low resistance allows the device to switch electricity with little loss of power, making it ideal for high-efficiency switching applications. Additionally, the DMG4413LSS-13 has a low input capacitance, which helps reduce noise, reduces power dissipation, and allows the device to be switched at high frequencies.

The DMG4413LSS-13 has a wide range of applications, due to its reliability and efficiency. It is commonly used in power supplies, inverters, DC/DC converters, switched-mode power supplies, and motor drives. It is also used for other applications such as low-noise amplifiers, radio transmitters, and other switching applications. The device is also widely used in automotive, medical, and industrial electronics.

In conclusion, the DMG4413LSS-13 is an efficient and reliable single-channel medium-voltage metal-oxide-semiconductor field-effect transistor, and is suitable for a variety of applications that require fast switching, low input capacitance, and high on-resistance. Its Schottky barrier, low on-resistance, and fast switching speed make it ideal for use in power supplies, converters, and other medium-voltage switching applications. It is commonly found in automotive, medical, and industrial electronics, and is a reliable and efficient device for a variety of applications.

The specific data is subject to PDF, and the above content is for reference