Allicdata Part #: | DMG4466SSS-13DITR-ND |
Manufacturer Part#: |
DMG4466SSS-13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 30V 10A 8SO |
More Detail: | N-Channel 30V 10A (Ta) 1.42W (Ta) Surface Mount 8-... |
DataSheet: | DMG4466SSS-13 Datasheet/PDF |
Quantity: | 2500 |
Vgs(th) (Max) @ Id: | 2.4V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOP |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.42W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 478.9pF @ 15V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 23 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMG4466SSS-13 is a single MOSFET that has many features and benefits for various sectors. Its small footprint and exceptional energy efficiency make it a great choice for many applications. It is designed to be a low-cost, high- performance and highly-reliable device. Additionally, its innovative construction provides a low on-resistance, which improves output power, thermal characteristics, and circuit efficiency.
The DMG4466SSS-13 is primarily used in the automotive sector. Its miniature size and low on-resistance make it suitable for high-performance driver control. In addition, it can be used as a switching solution in audio and video applications. Furthermore, it is also ideal for use in power electronics. This includes applications such as power supplies, motors, and solar panels.
The unique construction of the device is responsible for its many benefits. The MOSFET is built using a proprietary process, which is a combination of charge-ionization, electrochemical deposition, and electroless plating technology. This process enables the formation of an extremely thin, temperature-stable, and hydrophobic layer on the device. This attractive layer provides excellent energy-efficiency and high-performance.
The working principle of the DMG4466SSS-13 is quite straightforward. When voltage is applied to the gate, it controls a current flow between its source and drain. This current flow determines a resistance value, which is dependent on the voltage across the gate to the source. The higher the gate voltage, the higher the current flow resulting in a lower resistance. Conversely, the lower the gate voltage, the lower the current resulting in a higher resistance.
The drain to source breakdown voltage is another key specification of the device. This is the voltage at which the current no longer flows between the drain and source immediately. Its value is usually well below the maximum voltage that the device can tolerate, which is usually about 10V. This guarantees the safe operation of the device.
The RF small-signal common source FET amplifier is the preferred MOSFET for a variety of audio and video applications. It is tuned for operation in the 400MHz to 900MHz range, so it is suitable for use in wireless devices. The device has a low noise profile, high gain and excellent linearity, making it ideal for wideband applications.
The DMG4466SSS-13 is a reliable and cost-effective device that has numerous applications in the automotive, audio, video, and power electronics sectors. It is constructed using an innovative process that provides its many benefits. Additionally, its simple working principle makes it easy to use and understand. This makes it an ideal choice for many different applications.
The specific data is subject to PDF, and the above content is for reference
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