Allicdata Part #: | DMG4468LK3-13DITR-ND |
Manufacturer Part#: |
DMG4468LK3-13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 30V 9.7A TO252 |
More Detail: | N-Channel 30V 9.7A (Ta) 1.68W (Ta) Surface Mount T... |
DataSheet: | DMG4468LK3-13 Datasheet/PDF |
Quantity: | 2500 |
Vgs(th) (Max) @ Id: | 1.95V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.68W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 867pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 18.85nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 16 mOhm @ 11.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 9.7A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMG4468LK3-13 is a MOSFET transistor that is suitable for use in various electronic equipments. It is single from the FETs and MOSFETs set, containing an aluminum nitride and silicon-film gate that ensures low leakage current and great linearity of output current.
The DMG4468LK3-13 is mainly used in gate driver applications, such as high-frequency switching power supplies. It has been designed to deliver high output current, which makes it suitable for applications where high switching performance is required. It can also be used in other low-power applications, such as analog signal processors, voltage regulators, and digital logic circuits.
The DMG4468LK3-13 works on the principle of Field-effect Transistor (FET). Its operation is based on a thin layer of conducting material located on the source-drain channel. This layer can be either in the form of an ionized gas or a solid-state semiconductor material, such as silicon or silicon dioxide. The electric field generated by the gate electrode, when stimulated by a small voltage, will create an inversion layer between the source-drain channel and the gate. The result is that the MOSFET transistor is closed, or off, when no voltage is applied to the gate, and it is open, or on, when other electrical signals are applied to the gate.
The DMG4468LK3-13 is built in the surface-mount technology, meaning all the components of this MOSFET transistor are contained on a single piece of silicon. This makes the device very small compared to other FETs, allowing it to fit in compact and portable electronic devices, such as cellphones and tablets. The DMG4468LK3-13 also has low power consumption, which makes it particularly suitable for low-power applications, such as signal processing.
The DMG4468LK3-13 has an impressive operating temperature range, from -40ºC to +125ºC, enabling it to operate in the most extreme environmental conditions. Additionally, the device is incredibly reliable, with a low failure rate of 0.1%. This makes it ideal for a variety of applications, from portable electronics and prepaid telephone cards to automotive and industrial systems.
In summary, the DMG4468LK3-13 is a MOSFET transistor with low power consumption, great linearity of output current, and impressive operating temperature range, making it suitable for use in a variety of gate driver and other low-power applications. It is an ideal choice for high-frequency switching.
The specific data is subject to PDF, and the above content is for reference
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