Allicdata Part #: | DMG4712SSS-13DITR-ND |
Manufacturer Part#: |
DMG4712SSS-13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 30V 11.2A 8SOIC |
More Detail: | N-Channel 30V 11.2A (Ta) 1.55W (Ta) Surface Mount ... |
DataSheet: | DMG4712SSS-13 Datasheet/PDF |
Quantity: | 2500 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 11.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
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DMG4712SSS-13 is a type of field effect transistor (FET). Specifically it is a high-voltage insulated gate bipolar transistor (IGBT) designed to offer reliable electrical performance in a wide range of applications. IGBTs are used in a variety of power semiconductor applications due to their ability to switch large amounts of power where fast switching speeds and low power dissipation are required.
The DMG4712SSS-13 is suitable for applications such as AC/DC converters, motor drives and other power and load control circuits, such as switching in industrial automation. Its insulated gate allows for a higher voltage rating, up to 1.2kV, and improved immunity from noise. This makes the DMG4712SSS-13 ideal for high frequency applications.
The DMG4712SSS-13 is a single-cell IGBT, which means it is smaller than other FETs and has excellent thermal performance characteristics. This makes it suitable for use in high-power, high-frequency applications with high switching speeds. The DMG4712SSS-13 has a low on-resistance of 37mohm, allowing it to efficiently switch large amounts of power while dissipating a minimum amount of power. Furthermore, it also features an anti-parallel diode, which helps to protect the gate against possible problems caused by voltage transients. It is also able to handle large continuous and peak currents.
The working principle of the DMG4712SSS-13 is relatively simple, but very effective. When a low voltage is applied, the gate becomes positively charged. This causes the current to flow from the drain to the source, creating a channel through which electrons can circulate. When the voltage is removed, the gate is deactivated and the electrons can no longer pass through it. This causes the current to be cut off and the switching process is complete.
The DMG4712SSS-13 is an ideal device for a variety of applications due to its excellent power efficiency and its ability to handle high voltage and current levels. It is also easy to install, making it suitable for a wide range of installation environments. Thanks to its high reliability and long lifetime, the DMG4712SSS-13 is the perfect choice for many different applications.
The specific data is subject to PDF, and the above content is for reference
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