| Allicdata Part #: | DMG4N65CTDI-ND |
| Manufacturer Part#: |
DMG4N65CT |
| Price: | $ 0.90 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | MOSFET N CH 650V 4A TO220-3 |
| More Detail: | N-Channel 650V 4A (Tc) 2.19W (Ta) Through Hole TO-... |
| DataSheet: |  DMG4N65CT Datasheet/PDF |
| Quantity: | 15 |
| 1 +: | $ 0.81270 |
| 50 +: | $ 0.64915 |
| 100 +: | $ 0.56801 |
| 500 +: | $ 0.44050 |
| 1000 +: | $ 0.34776 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.19W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 900pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 13.5nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 3 Ohm @ 2A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
| Drain to Source Voltage (Vdss): | 650V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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.Introduction
DMG4N65CT is a type of FET, and it belongs to the FETs, MOSFETs, and Single category. This type of FET has been widely used in various applications due to its simple structure and high performance. In this article, we will discuss the application field and working principle of the DMG4N65CT.
Application Field
The DMG4N65CT is a FET which is most commonly used in switching applications. It is a low on-resistance FET that can be used to accurately switch a low voltage and current signals. This makes it ideal for applications such, as the control of motor speed, electric power control and the regulation of electric power in switch mode power supplies. The DMG4N65CT can also be used for applications such as lamp luminance regulation, LED dimming as well as other applications that require low voltage/current switching.
Working Principle
The DMG4N65CT is a type of FET that is similar to a MOSFET in its working principle. The FET works by having a channel formed between the drain and source regions which are connected to a high voltage. When a low voltage is applied to the gate region which is connected to the channel, current can flow through the channel as the voltage applied to the gate is increased.
This type of FET also has a body diode which helps protect the device when reverse polarity is applied to the source and drain. This diode helps prevent the MOSFET from breaking down in case the voltage is too high. The body diode is also responsible for the low on-resistance of the MOSFET which makes it suitable for switching applications.
Conclusion
In conclusion, the DMG4N65CT is a type of FET that is most commonly used in switching applications. It has a low on-resistance and a built-in body diode which helps protect the device from voltage spikes. This FET is also ideal for applications such as the control of motor speed, electric power control and the regulation of electric power in switch mode power supplies. This article has discussed the application field and working principle of the DMG4N65CT.
The specific data is subject to PDF, and the above content is for reference
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