DMG4468LFG

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	8-PowerUDFN
Supplier Device Package:	U-DFN3030-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	990mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	867pF @ 10V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	18.85nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	15 mOhm @ 11.6A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	7.62A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Discontinued at Digi-Key
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction
The DMG4468LFG is a robust, single MOSFET designed for use in a variety of applications, such as power management, DC/DC converters, switching power supplies, and lighting applications. This device features a low on-resistance of 50mΩ and a maximum drain current of 1.5A at low gate-to-source voltage, while providing a high frequency performance of 1MHz in the linear region. In addition, the DMG4468LFG also has a high linearity, with a typical linearization threshold of 2.6V and a minimum RDS(on) of 30mΩ.
Application Field
The DMG4468LFG is a high-performance MOSFET suitable for consumer electronics, such as power management, DC/DC converters, zero voltage/current switching power supplies, and lighting applications. The DMG4468LFG is designed for use in applications where high efficiency, fast switching, and low power dissipation are of utmost importance. The device is perfect for switching between loads, providing the user with accurate and reliable switching functionality. The DMG4468LFG is also perfect for applications where current or voltage sensing is required, such as automotive modules, safety devices, and industrial systems.
Working Principle
The DMG4468LFG is a single MOSFET with an N-channel design. It is a four-terminal device, with the drain, gate, and source terminals located on one side, and a fourth terminal located on the opposite side. The drain is the terminal where the higher voltage is applied and the source is the terminal that provides current to the load. The gate terminal is used to control the state of the device; when the voltage applied to this terminal is increased, the drain-source channel is opened, thus allowing current to flow. The MOSFET also contains a fourth terminal, the body terminal, which is used to produce a more efficient current flow. The MOSFET behaves as an amplifier by allowing current to flow from drain to source when the gate terminal is exposed to a voltage signal. It can also be used as an on/off switch, as it turns off when the voltage applied to the gate terminal is reduced.
Conclusion
The DMG4468LFG is a high-performance, single MOSFET designed for use in a variety of applications. It features a low on-resistance of 50mΩ and a maximum drain current of 1.5A at low gate-to-source voltage, as well as a high linearity, with a typical linearization threshold of 2.6V and a minimum RDS(on) of 30mΩ. This device is perfect for applications where fast switching and low power dissipation are important, such as power management, DC/DC converters, switching power supplies, and lighting applications. It is also suitable for use in applications where current or voltage sensing is required, such as automotive modules, safety devices, and industrial systems. The DMG4468LFG works by controlling the voltage applied to the gate terminal, thus allowing the current to flow from the drain to the source.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description