DMN601DMK-7

Vgs(th) (Max) @ Id:	2.5V @ 1mA
Base Part Number:	DMN601DMK
Supplier Device Package:	SOT-26
Package / Case:	SOT-23-6
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power - Max:	700mW
Input Capacitance (Ciss) (Max) @ Vds:	50pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:	304nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	2.4 Ohm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C:	510mA
Drain to Source Voltage (Vdss):	60V
FET Feature:	Logic Level Gate
FET Type:	2 N-Channel (Dual)
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

DMN601DMK-7 is a Field Effect Transistor (FET) array that consists of two N-channel, depletion-mode, enhancement-mode Mosfet transistors. It is commonly used as an audio power amplifier, often in combination with complementary MOSFETs. The maximum current handling is 12A, and the maximum drain-source voltage is 55V.

Structure

DMN601DMK-7 consists of two N-channel depletion-mode, enhancement-mode transistors. Its distinct features are the high current capacity, low dissipation, low gate to source leakage, and low input impedance. Each transistor is a self-contained device, with a pre-allocated gate (G), drain (D) and source (S) pad. Therefore, they are easy to package and assemble.

Characteristics and Properties

DMN601DMK-7 offers plenty of features and properties, including:

• High current handling up to 12A
• Low power consumption
• Low gate to source leakage
• High switching speed
• High gain
• High operating temperature range(-55 oC to 125 oC)
• Noise immune

Application Field

DMN601DMK-7 has multiple application fields. It is commonly used as an audio power amplifier and an audio line amplifier in mixers, guitar amplifiers, home theatre and car audio systems. It is also used as a servo amplifier, a pulse-width modulated (PWM) amplifier, an analog voltage amplifier and a high-frequency amplifier.

Working Principle

DMN601DMK-7 works by applying a voltage to the gate of the transistors to create a voltage difference between the gate and the source, which attracts current to the drain and away from the source, creating a conductive channel between the drain and the source. When the gate voltage is increased, the channel conducts more current; when the voltage is reduced, less current is conducted. This is known as “channel control”, and is used to control the output current and voltage. The latest version of DMN601DMK-7 offers a new feature: channel control without the need of a separate control circuit. This allows the use of a single system to control the current and voltage.

Conclusion

DMN601DMK-7 is a popular FET array consisting of two N-channel enhancement-mode, depletion-mode Mosfet transistors. It is widely used in audio power amplifiers due to its high current handling and low power consumption. It also offers a variety of features such as low input impedance, low gate to source leakage, and high switching speeds. Additionally, the new version of DMN601DMK-7 offers a new feature that allows for channel control without the need of a separate circuit.

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