Allicdata Part #: | DMN601WKQ-13-ND |
Manufacturer Part#: |
DMN601WKQ-13 |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET NCH 60V SOT323 |
More Detail: | N-Channel 60V 200mW (Ta) Surface Mount SOT-323 |
DataSheet: | DMN601WKQ-13 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.04347 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 2 Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 200mW (Ta) |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-323 |
Package / Case: | SC-70, SOT-323 |
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The DMN601WKQ-13 MOSFET is one of the most popular transistors available on the market today. It is a discrete, single-channel MOSFET transistor designed for switching applications, and is a great choice for a variety of usages, including signal conditioning and power control. In this article, we will take a look at the various application fields and the principle of operation of the DMN601WKQ-13.
Firstly, the DMN601WKQ-13 is suitable for a wide range of applications, including the switching of large currents, the regulation of power and the signal conditioning of high frequency signals, as well as low-power battery or logic switching. It is also suitable for use as an electronic on-off switch, either to switch on a load or enable its operation, as well as a power amplifier. As such, this makes it ideal for use in a broad range of fields, from consumer electronics to industrial motor control applications, where switching and signal conditioning are needs.
The DMN601WKQ-13 has a single-channel MOSFET design that makes it particularly suitable for switching applications. As such, it is designed to be used with a low voltage, which is why it is also known as a “low-voltage” MOSFET. This design makes it particularly suited for applications that require both low voltage and high efficiency. It also offers low ON-resistance, meaning that it has a low capacitive turn-off time, making it suitable for high-speed, switching applications.
The working principle of the DMN601WKQ-13 is that of a field-effect transistor, meaning that two gate inputs control the current and voltage flow between two terminals. When the gate voltage is high, the gate-source voltage is also high, which increases the conductivity between the two terminals, allowing current to flow. Conversely, when the gate voltage is low, the gate-source voltage is also low, reducing the conductivity between the two terminals, meaning that no current can flow.
In addition to controlling the current flow, the gate voltage can also be used to control the magnitude of the current, meaning that the DMN601WKQ-13 MOSFET can also be used as a voltage controlled current source. This is because the gate voltage affects the current flowing through the device, meaning that it can be adjusted to provide a specific current.
Finally, the DMN601WKQ-13 MOSFET also features an anti-parallel diode, which allows the transistor to block reverse current flow, and hence save power when not in use. This is an important feature for many applications, such as battery-powered systems, which can benefit from an efficient power management system.
In summary, the DMN601WKQ-13 is an extremely popular single-channel MOSFET transistor, due to its wide range of application fields and its efficient operating principle. It is suitable for a variety of usages, ranging from signal conditioning and power control, to the switching of large currents, the regulation of power and the operation of high speed applications. It also features an anti-parallel diode, which allows it to be efficient when not in use, making it an ideal choice for applications that require both low voltage and high efficiency.
The specific data is subject to PDF, and the above content is for reference
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