DMN63D1LW-7

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DMN63D1LW-7 is a single N-Channel MosFET manufactured by Diodes Incorporated. It is an enhanced VDMOS transistor with a maximum drain source voltage of 63V. Additionally, it has a maximum drain current of 3.2A and maximum gate source voltage of 20V. It has a typical total gate charge of 28nC at VGS of 10V, a RDS(on) of 0.0075 ohms at VGS of 10V, and a maximum power dissipation of 9.5W. It is designed to be used in a variety of applications such as motor controllers, DC to DC converters, power amplifiers, and low-voltage power supplies.The working principle of this particular MosFET is the same as that of all other MosFETs. When no voltage is applied to the gate electrode, the transistor is off and there is no current flow between the drain and source. When voltage is applied to the gate electrode, current is allowed to pass between the drain and source. This type of transistor is called an enhancement-mode MOSFET.The drain-source breakdown voltage is what makes this MosFET unique. It can withstand a maximum drain-source voltage of 63V, making it ideal for applications that require higher levels of voltage.Another unique feature of the DMN63D1LW-7 is the total gate charge. At VGS of 10V, the total gate charge is only 28nC. This makes it ideal for applications that require fast switching speeds.The low RDS(on) value of 0.0075 ohms also makes this MosFET an attractive option for applications that require low on-state resistance. This allows for higher current flows, resulting in faster switching and higher efficiency.Finally, the DMN63D1LW-7 has a maximum power dissipation of 9.5W, making it suitable for applications that require higher power handling.Overall, the DMN63D1LW-7 offers a wide range of features and is a great choice for a variety of applications that require higher levels of voltage and a low overall power dissipation rate. It is a reliable and efficient choice for motor controllers, DC to DC converters, power amplifiers, and low-voltage power supplies.

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