DMN62D0UT-13 Allicdata Electronics
Allicdata Part #:

DMN62D0UT-13DI-ND

Manufacturer Part#:

DMN62D0UT-13

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET 2N-CH 60V 0.35A SOT523
More Detail: Mosfet Array Surface Mount SOT-363
DataSheet: DMN62D0UT-13 datasheetDMN62D0UT-13 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.03570
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: *
Packaging: Tape & Reel (TR) 
Part Status: Active
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

DMN62D0UT-13 is a field effect transistor (FET) array with advanced features, suitable for many applications in various industries. The array has two types of FETs in it, a depletion mode MOSFET and an enhancement mode MOSFET.

The depletion mode MOSFET, also known as an enhancement type FET, works by creating a region within the device that has a negative potential, while the enhancement type FET increases current flow through the device by increasing the positive potential of the region. This FET array gives similar performance to both types of FETs, but with a smaller footprint and lower cost.

The DMN62D0UT-13 array enables high current and fast switching applications in a wide range of industries. It is suitable for use in high speed switching functions such as load switching, solenoid control, motor speed and torque control, and HVAC systems. It is also suitable for use in communication systems, frequency synthesizers and measurements.

The power handling capabilities of the DMN62D0UT-13 array make it ideal for applications which require high current and high switching speeds. It is also low noise and can be used as a power switch in audio systems, video systems and other applications which require low noise operation. The array is capable of operating up to 200 volts and 4 amps continuous current at 65℃.

The working principle of the array is based on applying a gate voltage to the array’s terminals, which in turn creates an electric field across the substrate. This electric field excites the electrons in the substrate, allowing them to move to the interface between the depletion mode and enhancement mode FETs. Consequently, the field strength affects the flow of current through the array and allows high-speed switching.

The DMN62D0UT-13 array is also highly reliable, as it is manufactured using advanced technologies. The FETs feature protection against overcurrent, overvoltage and thermal stress. Additionally, the array is RoHS compliant and has a low profile, so it is suitable for high density applications.

In summary, the DMN62D0UT-13 is a great tool for many applications in various industries and offers the user an excellent performance, reliability, and versatility. It enables high current and fast switching applications, has a low profile and is RoHS compliant. It is also easy to implement and provides great protection features.

The specific data is subject to PDF, and the above content is for reference

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