DMN63D1LT-7

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

DMN63D1LT-7 is a N-Channel enhancement mode MOSFET.

It is part of the DMN series, which are fast switching devices with a low drain-source ON resistance when operated with a 4.5 V gate drive. The DMN series can handle high current, with a low avalanche voltage range suitable for high frequency operation.

Given its construction, the DMN63D1LT-7 is suitable for a wide range of applications. These include radio frequency and high speed switching, high voltage switching, low noise power amplification, high power switching, and power management.

The DMN63D1LT-7 is a single high-speed, low drain-source ON resistance MOSFET. It consists of an N-channel silicon MOSFET integrated with a gate protection diode in an 8-pin SOIC package. The MOSFET has an advanced design that provides lower gate-charge and maximum transconductance. It can handle high power, with a high frequency response range up to 500 MHz.

The DMN63D1LT-7 operates with a threshold voltage between 1.5 and 4 V. Furthermore, it features a very low RDS(ON) of 350 m Ohm at VGS(ON) of 4.5 V and a fast switching speed of 350ns for a high-speed data transfer. The MOSFET also has a low gate charge of 3.5 nC and a maximum avalanche voltage of 55 V for reliable high voltage operation.

The DMN63D1LT-7 is designed to be operated in a variety of ways, depending on the application. These include single-ended 3.3V operation, push-pull VGS operation, half-bridge operation and high frequency operations. In all cases, the device can be operated with a gate voltage of 4.5V.

The working principle behind the DMN63D1LT-7 is based on the MOSFET’s unique design. The device consists of a metal oxide semiconductor field effect transistor, or MOSFET, which is capable of amplifying or switching electric signals. The MOSFET is constructed of an insulated gate, source, and drain wherein the source is connected to the drain and the gate can be used to control the flow of current between them. When the gate voltage is increased, a MOSFET can open and allow current to flow from the source to the drain. When the gate voltage is reduced, a MOSFET can close and prevent current from passing from the source to the drain. This principle can be used to control the current flow in any type of electronic circuit.

In summary, the DMN63D1LT-7 is a N-Channel enhancement mode MOSFET suitable for a wide range of applications, such as radio frequency and high speed switching, high voltage switching, low noise power amplification, high power switching, and power management. With a low RDS(ON) of 350mΩ at 4.5V, as well as a fast switching speed of 350ns and a low gate charge of 3.5nC, the DMN63D1LT-7 is suitable for many high-performance applications.

The specific data is subject to PDF, and the above content is for reference