DMN63D0LT-7 Discrete Semiconductor Products |
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Allicdata Part #: | DMN63D0LT-7DITR-ND |
Manufacturer Part#: |
DMN63D0LT-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 100V SOT523 |
More Detail: | Mosfet Array |
DataSheet: | DMN63D0LT-7 Datasheet/PDF |
Quantity: | 3000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | -- |
FET Feature: | -- |
Drain to Source Voltage (Vdss): | -- |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | -- |
Operating Temperature: | -- |
Mounting Type: | -- |
Package / Case: | -- |
Supplier Device Package: | -- |
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The DMN63D0LT-7 is a high-performance, high-density lateral power MOSFET array. It is the perfect candidate for applications that require efficient, space-saving and reliable power switching or signal delivery and processing. It is a versatile, highly efficient, and cost-effective package solution.
The DMN63D0LT-7 is part of an advanced MOSFET array technology that includes an innovative dual-channel design, multiple cascade protection and thermal overload protection to ensure reliable and consistent performance. The array is designed to provide a maximum current rating of up to 60 Amps, with a breakdown voltage of 700 volts. It is composed of eight N-channel MOSFETs and eight P-channel MOSFETs.
The DMN63D0LT-7 array is designed for use in a variety of applications, including automotive, energy storage, and power systems. Its robust and adaptable design renders it capable of performing in a wide range of temperatures and environments. It features a high power density, low power dissipation, and excellent thermal performance, making it ideal for applications requiring high density, efficiency, and reliability.
The DMN63D0LT-7 array primarily operates based on its intrinsic Gate-to-Source voltage Vgs, which is modulated in order to switch current through the array. This Vgs is generated using the Gate-to-Source voltage of the internal MOSFETs to obtain the desired power or signal switch. Within a normal working range the Gate-to-Source voltage provides a highly reliable switch while allowing a wide range of current to be delivered or processed.
The DMN63D0LT-7 also includes individual gate protection diodes. This feature prevents any part of the device from becoming conductive by reversing the biasing of the connected gates during an overvoltage event. In addition, each MOSFET can be individually turned on or off through the control leads, making this an extremely efficient and flexible package. Additionally, the DMN63D0LT-7 features thermal overload protection to increase the ruggedness of the device and its ability to withstand temperature extremes.
The DMN63D0LT-7 is an efficient and reliable solution for power or signal switching applications in a wide variety of industries. It offers a powerful density, robustness, and excellent thermal performance, making it ideal for applications that require efficient and reliable operation. Through its Gate-to-Source voltage Vgs, individual gate protection diodes, and thermal overload protection, the DMN63D0LT-7 is an excellent choice for these applications.
The specific data is subject to PDF, and the above content is for reference
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DMN63D8L-7 | Diodes Incor... | -- | 1000 | MOSFET N-CH 30V 0.35A SOT... |
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DMN67D8LW-7 | Diodes Incor... | 0.04 $ | 1000 | MOSFET N-CH 60V SOT323N-C... |
DMN61D9UW-13 | Diodes Incor... | 0.04 $ | 1000 | MOSFET N-CH 60V 0.34A SOT... |
DMN62D0UW-13 | Diodes Incor... | 0.04 $ | 1000 | MOSFET N-CH 60V 0.34A SOT... |
DMN63D1L-7 | Diodes Incor... | -- | 1000 | MOSFET N-CH 60V 0.38A SOT... |
DMN63D1LW-7 | Diodes Incor... | -- | 1000 | MOSFET N-CH 60V 0.38A SOT... |
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DMN60H080DS-13 | Diodes Incor... | 0.06 $ | 1000 | MOSFET N-CH 600V 80MA SOT... |
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DMN63D1LT-13 | Diodes Incor... | 0.1 $ | 1000 | MOSFET N-CH 60V 320MA SOT... |
DMN6070SY-13 | Diodes Incor... | -- | 1000 | MOSFET N-CH 60V 4.1A SOT8... |
DMN61D8L-13 | Diodes Incor... | 0.11 $ | 1000 | MOSFET N-CH 60V 0.47A SOT... |
DMN63D1LT-7 | Diodes Incor... | -- | 1000 | MOSFET N-CH 60V 320MA SOT... |
DMN66D0LT-7 | Diodes Incor... | -- | 3000 | MOSFET N-CH 60V 115MA SOT... |
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DMN62D0UT-13 | Diodes Incor... | 0.04 $ | 1000 | MOSFET 2N-CH 60V 0.35A SO... |
DMN67D8LDW-13 | Diodes Incor... | 0.05 $ | 1000 | MOSFET 2N-CH 60V 0.23A SO... |
DMN65D8LDWQ-13 | Diodes Incor... | 0.06 $ | 1000 | MOSFET 2N-CH 60V 180MA SO... |
DMN62D0UDW-13 | Diodes Incor... | 0.06 $ | 1000 | MOSFET 2N-CH 60V 0.35A SO... |
DMN63D1LDW-13 | Diodes Incor... | 0.06 $ | 1000 | MOSFET 2N-CH 60V 0.25A SO... |
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