Allicdata Part #: | DMN65D8LW-7DITR-ND |
Manufacturer Part#: |
DMN65D8LW-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 60V 0.3A SOT323 |
More Detail: | N-Channel 60V 300mA (Ta) 300mW (Ta) Surface Mount ... |
DataSheet: | DMN65D8LW-7 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 300mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Rds On (Max) @ Id, Vgs: | 3 Ohm @ 115mA, 10V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 0.87nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 22pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 300mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-323 |
Package / Case: | SC-70, SOT-323 |
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The DMN65D8LW-7 is a single N-Channel D-MOSFET specifically designed for use in Low-Voltage/High-Speed Switching Applications. It consists of an inner N-channel D-MOSFET with a low on-state resistance and a low threshold voltage of 1.5V. Furthermore, the DMN65D8LW-7 features a fast switching time of 10nS and is able to handle up to 75A of drain current in a continuous fashion. Its high-speed switching characteristics make it suitable in applications such as power management, motor control, portable communication devices and various other applications requiring high-angle switching with low noise.
The working principle behind this single N-Channel D-MOSFET is based on capacitance. The transistor is actuated by applying a voltage to the gate, which in turn creates a charge on the metal oxide silicon gatediode within the device. This applied voltage causes the metal oxide silicon gatediode to become conductive, allowing current to flow from the source to the drain. In order for current to flow continuously through the drain, the applied voltage must be large enough to move the metal oxide silicon gatediode past its threshold voltage. Once the applied voltage is removed, the metal oxide silicon gatediode will become non-conductive, stopping the current flow.
The DMN65D8LW-7 single N-Channel D-MOSFET can be used in a variety of applications that require high speed switching with low noise. It is ideal for power management applications such as converters and circuit protection, as well as motor control applications. This device also finds use in portable communication equipment, portable gaming devices, and other applications that require high-angle switching. The device’s high-speed switching characteristics, along with its low on-state resistance and low threshold voltage, make it well suited for these applications.
Overall, the DMN65D8LW-7 is an ideal single N-Channel D-MOSFET for applications that require fast switching, low noise, and high angle switching. It is capable of handling up to 75A of drain current, and its low on-state resistance and low threshold voltage make it well suited for a host of power management and motor control applications.
The specific data is subject to PDF, and the above content is for reference
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