
Allicdata Part #: | DMN67D7L-13-ND |
Manufacturer Part#: |
DMN67D7L-13 |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFETN-CHAN 60V SOT23 |
More Detail: | N-Channel 60V 210mA (Ta) 570mW (Ta) Surface Mount ... |
DataSheet: | ![]() |
Quantity: | 1000 |
10000 +: | $ 0.02520 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 570mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 22pF @ 25V |
Vgs (Max): | ±40V |
Gate Charge (Qg) (Max) @ Vgs: | 0.821nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 5 Ohm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 210mA (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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DMN67D7L-13 is a single JFET (Junction Field-Effect Transistor) device in TO-92 package that is constructed with N-channel technology and it is applied in a variety of analog and digital applications. This transistor is developed by Fairchild Semiconductor and features high-gating efficiency, low-noise operation, low-power operation and high-gate-resistance. It also has a wide slew rate, high output impedance and low offset voltage, which is advantageous for increasing the reliability of the device.
In analog operations, the DMN67D7L-13 works as voltage-controlled current sources to enable precise current control. This device can also regulate voltages, and it is suitable for multiple applications such as in AC/DC switching practices, in timer circuits, and in interface amplifiers. Additionally, the DMN67D7L-13 supports load discharge and the load protection. In short, it is capable of functioning as an amplifier and as an amplifier driver.
Different types of transistors operate on different principles, and the DMN67D7L-13 is no different. The working principle behind this transistor is that of a majority carrier. In a JFET, majority carriers are formed by the movement of electrons that are pushed away by the presence of the gate. The gate forms a barrier around the channel, which keeps the majority carriers trapped inside and prevents them from going out. The trapped electrons then form an electric field, which helps in controlling the current flow between the gate and the source.
In the DMN67D7L-13, the source acts as a current sink and provides the majority carriers to the gate. The gate then uses the electric field to control the amount of current flowing through the channel. When there is a positive voltage applied to the gate, the current that is allowed to flow will increase. On the other hand, when the voltage is reduced or reversed, the current flow will decrease.
The benefits of the DMN67D7L-13 transistor are clear. The high-gating efficiency and low-noise operation make it ideal for audio applications. The low-power operation also makes it a great choice for battery-powered projects, while the wide slew rate, high output impedance and low offset voltage allow for precise current control. This makes the DMN67D7L-13 suitable for a wide range of applications, from amplifiers to voltage regulators, and even in AC/DC switching.
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