DMN61D8L-13

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The DMN61D8L-13 is a single N-Channel Enhancement Mode Field-Effect Power Transistor. It is designed for high power switching applications and provides improved energy savings. The device combines excellent high frequency performance and ultra low RDS(on) with a low gate charge for simplified drive circuitry.

Application Field

The DMN61D8L-13 can be used in a variety of different applications. It is often used in automated control, industrial, medical and telecommunications systems. The device is designed for applications including low-side and high-side switching and can be used for high power DC/DC converters and synchronous rectifiers, motor drivers, lighting and power supplies.

Working Principle

The DMN61D8L-13 is an N-Channel Enhancement Mode field effect power transistor. It works by using an electric field to control current flow. When the gate voltage is below the threshold voltage, the field effect is not strong enough to punch through the oxide layer, thus the transistor will remain \'off\'. However, when the gate voltage exceeds the threshold voltage, the electric field is strong enough to punch through the oxide layer, allowing current to flow through the channel.

The DMN61D8L-13 has an excellent high frequency performance and a low gate charge for simplified drive circuitry. This makes it an ideal choice for high-power switching applications. It is also able to provide improved energy savings by reducing switching losses.

The DMN61D8L-13 is a versatile device and can be used in a variety of different applications. Its high frequency performance and low gate charge make it an ideal choice for high power switching applications. By providing improved energy savings through reduced switching losses, the DMN61D8L-13 is a great choice for automated control, industrial, medical and telecommunications systems.

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