DMN63D1LV-13

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DMN63D1LV-13 is a variety of surface mount transistor array product developed by American semiconductor company Fairchild. It mainly belongs to surface mount transistor array and is a field effect transistor. This variety is divided into two main categories: DMN63D1LV-13A and DMN63D1LV-13B.

DMN63D1LV-13A contains two N-channel enhancement-mode MOSFETs, suitable for applications requiring dual gate inputs. DMN63D1LV-13B includes two N-channel enhancement-mode MOSFETs, suitable for applications requiring single gate control.

The operating voltage of DMN63D1LV-13 is applied to the gate and drain, the gate of each MOSFET is connected to each other within the array, so as to achieve the controlling of switch of the whole array. The common source (D) of both MOSFETs is connected together. The drain electrode of each MOSFET is connected to its own separate output terminal.

DMN63D1LV-13 has many practical application fields. It is mainly used for inductive load switching, motor control, lighting and illumination, automotive applications and so on. It has the certain mechanical strength, thermal stability and chemical resistance. So its application field is very wide. Moreover, It can be used in applications where high speed switching and /or current surges are critical and also it can be used as a high side switch, when the load can withstand 270V in reverse direction.

DMN63D1LV-13 works on the same principle of a MOSFET (metal oxide semiconductor field effect transistor). In MOSFET the body effects the channel formation, the gate terminal is an insulated gate that separates or dominates the applied electric field and when a small gating voltage is applied Gate-to-Source the channel is established and drain current flows. The electric field can be controlled by a low voltage from the power source, thus making MOSFET act as a digital switch. This mechanism is applied to the two MOSFETs of DMN63D1LV-13 by connecting the gate of both MOSFETs to each other and then giving external pulse signal to one of the gates. This establishes the connection between drain and source of both MOSFETs and as a result, current flows between the drain and source of both MOSFETs.

DMN63D1LV-13 is an excellent product with a wide range of applications and good processing performance. It has high operating temperature, high current carrying capability and good mechanics. The DMN63D1LV-13 is one of the most reliable and economically viable component in the market which can be used for its excellent performance.

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