
Allicdata Part #: | DMN63D1LDW-7-ND |
Manufacturer Part#: |
DMN63D1LDW-7 |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET 2N-CH 60V 0.25A SOT363 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 60V 250mA 310mW Su... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.07000 |
10 +: | $ 0.06790 |
100 +: | $ 0.06650 |
1000 +: | $ 0.06510 |
10000 +: | $ 0.06300 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 250mA |
Rds On (Max) @ Id, Vgs: | 2 Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 0.3nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 30pF @ 25V |
Power - Max: | 310mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The DMN63D1LDW-7 is a high-performance device typically used for switching and amplification applications in the field of transistors, field-effect transistors (FETs), and metal-oxide-semiconductor field-effect transistors (MOSFETs). This advanced device is classed as an array, as it features multiple transistors and FETs in a single package that allow it to function as an integrated circuit. This type of integration provides a cost-effective and energy-efficient solution for many applications.
In modern applications, the DMN63D1LDW-7 is most commonly used for switching and amplification. The dual-gate MOSFET design of this device allows it to switch and amplify with very high speed and efficiency. The array layout also improves efficiency, as it allows the device to be operated by a single power supply. This allows the user to connect several devices in parallel, which further increases the reliability of the device.
The excellent speed and power characteristics of the DMN63D1LDW-7 make it ideal for a wide variety of applications. It is used in a variety of areas, including automotive, telecommunications, industrial, and consumer electronics. It can also be used in computers and other digital devices, where its fast and efficient operation makes it a popular choice.
The DMN63D1LDW-7 is a typical source-following MOSFET device. This means that the output signal is the same as the input signal, but with a higher gain. This is achieved through the combination of two transistors that are connected in series. When the gate voltage increases, the voltage at the source also increases, causing current to flow through the source-following MOSFET. This causes the drain voltage to decrease, resulting in an amplified output signal.
In addition to its fast and efficient operation, the DMN63D1LDW-7 also offers some other beneficial characteristics. It has a low power dissipation and is highly reliable, due to its built-in protection circuitry. It also has a wide input voltage range, which increases its versatility for a variety of applications. Furthermore, the DMN63D1LDW-7 is able to operate at both high and low temperatures, making it suitable for use in a variety of applications.
In conclusion, the DMN63D1LDW-7 is one of the most versatile and reliable MOSFET devices on the market. It offers excellent speed and power characteristics, is highly reliable, and is able to operate in a wide range of temperatures. These features make it suitable for a wide variety of applications, ranging from automotive, telecommunications, and industrial, to consumer electronics and digital devices. The DMN63D1LDW-7 is a great choice for anyone looking for an efficient and reliable solution for their MOSFET-based application.
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