DMN62D0UDW-13

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DMN62D0UDW-13 Application Field and Working Principle

Introduction

The DMN62D0UDW-13 is a dual N-channel Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) array. It features low on-resistance, fast switching speed and ESD protection. The package is the tiny SOT-563, a surface mount device providing a 0.8 mm profile height. The DMN62D0UDW-13 is able to replace three discrete MOSFETs with a single unit, making it ideal for applications where a compact solution is essential. Compared to other smaller devices, this part also boasts the highest maximum junction temperature in its class, at 175°C, allowing for even greater energy efficiencies and higher reliability.

Application Fields

The DMN62D0UDW-13 array can be used in a variety of different applications. Examples include:

• DC-DC converters;
• High-speed switching circuits;
• Portable devices and cell phones;
• Automotive power supplies;
• Computer motherboards;
• Power over Ethernet;
• Solar energy systems;
• Digital audio/video devices.

Working Principle

The DMN62D0UDW-13 MOSFET array utilizes an enhancement mode design. This means that the transistor does not require a gate voltage in order to be active, instead the FET is enabled when the gate voltage exceeds a set threshold level. This voltage is referred to as the \'firing voltage\'.

When the gate voltage is below the set level the FET behaves as an open circuit, whose resistance is effectively infinite, thus it has no affect on the circuit. Once the required voltage is applied, the FET switches on, allowing current to flow through the device. This affects the voltage level of the output, depending on the resistance value of the FET.

The drain-source resistance (RDS on) is a measure of the current flow capability, with a lower resistance value resulting in a higher current flow and vice versa. In addition to this, the threshold voltage also has an effect on the drain-source resistance; a higher voltage will result in a lower resistance level.

Conclusion

The DMN62D0UDW-13 array is a compact, efficient and highly reliable Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). Its small package size and high maximum junction temperature of 175°C makes it ideal for many portable electronic devices, such as cell phones, digital audio/video devices, power over Ethernet and solar energy systems. The DMN62D0UDW-13 features an enhancement mode design, resulting in an effectively infinite resistance when its gate voltage is below the threshold level and a reduced resistance once the gate voltage exceeds this value. This combination of features makes the DMN62D0UDW-13 ideal for high-speed switching applications.

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