DMN66D0LDW-7

Vgs(th) (Max) @ Id:	2V @ 250µA
Base Part Number:	DMN66D0LDW
Supplier Device Package:	SOT-363
Package / Case:	6-TSSOP, SC-88, SOT-363
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power - Max:	250mW
Input Capacitance (Ciss) (Max) @ Vds:	23pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:	--
Series:	--
Rds On (Max) @ Id, Vgs:	5 Ohm @ 115mA, 10V
Current - Continuous Drain (Id) @ 25°C:	115mA
Drain to Source Voltage (Vdss):	60V
FET Feature:	Logic Level Gate
FET Type:	2 N-Channel (Dual)
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Transistors - FETs, MOSFETs - Arrays - DMN66D0LDW-7 Application Field and Working Principle

The DMN66D0LDW-7 is an array of transistors commonly grouped as field effect transistors (FETs) and metal-oxide semiconductor FETs (MOSFETs). They are a type of semiconductor device which can be used for a variety of applications in electronics. This article will discuss the specific application field and working principle of the DMN66D0LDW-7.FETs and MOSFETs are both three-terminal devices that allow voltage control of current flow. They are used as switches and amplifiers, and can have a wide array of applications such as in power supplies, motor control, audio, communications, and other areas of electronics. The DMN66D0LDW-7 is a specific array of FETs and MOSFETs which can be used for a variety of application fields.The DMN66D0LDW-7 is primarily used in power conversion circuits. This array of FETs and MOSFETs is designed with P-channel transistors that are connected in parallel, allowing them to switch high currents. This makes them ideal for power supplies, such as in AC to DC converters, as well as for motor control and power stages for audio applications.The DMN66D0LDW-7 can also be used in digital logic circuits, as well as for switching applications in general. The array of MOSFETs are designed with a low on-resistance which allows them to efficiently switch high currents with very low losses. This makes them ideal for logic circuits and switching applications, such as in LED drivers and LED illumination applications.The DMN66D0LDW-7 also has an adjustable drain-source breakdown voltage. This is controlled by an external variable resistor connected between the gate and the source of the FET. This feature allows the DMN66D0LDW-7 to be used as a variable voltage regulator, which can be used to control the voltage of a device or circuit.The working principle of the DMN66D0LDW-7 is based on the same principles as other FETs and MOSFETs. An electric field is used to control the flow of current through the device. The gate terminal of the FET is used to control this electric field, allowing the device to act as an electronically-controlled switch. When the gate voltage is increased, the electric field increases and allows current to flow through the device. When the gate voltage is decreased, the electric field is decreased and current does not flow through the device.The DMN66D0LDW-7 is an array of FETs and MOSFETs with a wide range of application fields. They are designed with parallel connected P-channel transistors, allowing them to switch high currents efficiently. This makes them ideal for power supplies, motor control, logic circuits, switching circuits, and voltage regulation. They are also able to turn on and off rapidly and can be used in a variety of applications. The working principle of the DMN66D0LDW-7 is based on the same principles as other FETs and MOSFETs, using an electric field to control the flow of current through the device.

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