| Allicdata Part #: | DMP2010UFV-13-ND |
| Manufacturer Part#: |
DMP2010UFV-13 |
| Price: | $ 0.16 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | MOSFET P-CH 20V 50A POWERDI3333 |
| More Detail: | P-Channel 20V 50A (Tc) 2W (Ta) Surface Mount Power... |
| DataSheet: | DMP2010UFV-13 Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.14935 |
| Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
| Package / Case: | 8-PowerVDFN |
| Supplier Device Package: | PowerDI3333-8 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3350pF @ 10V |
| Vgs (Max): | ±10V |
| Gate Charge (Qg) (Max) @ Vgs: | 103nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 9.5 mOhm @ 3.6A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The DMP2010UFV-13 is a transistor that belongs in the category of Transistors - FETs, MOSFETs - Single. It is mainly used in applications that require low on-state impedance and high current carrying capacity. As a result, it has a wide range of applications: it can be used in power supplies and DC-DC converters, motor control circuits, lighting control applications, and even in audio amplifiers and other audio applications. It can also be used in low-power motor drivers, and even as a switch in high-speed switching applications.
The DMP2010UFV-13 is a insulated gate bipolar transistor (IGBT) that has a single die construction. This transistor uses an insulated gate to control the flow of current through the transistor, allowing for greater efficiency, lower on-state voltage drop and faster switching speeds. It also has a built-in reverse bias diode and a gate breaker diode, which help to limit the energy that can be dissipated in the transistor when voltage is reversed. The DMP2010UFV-13 also features an on-state current rating of up to 13 Amp with a BVCES of 500V.
The working principle of the DMP2010UFV-13 is based on the depletion mode enhancement mode of operation. The device consists of a vertically stacked pair of N-type and P-type semiconductor layers. When an external voltage is applied to the gate of the device, a negative charge will appear on the gate of the transistor. This negative charge causes the P-type material to become less conducting, thus allowing current to flow through the N-type layer. The amount of current that can flow is controlled by the voltage applied to the gate. As a result, the DMP2010UFV-13 transistor can be used to regulate current in a circuit.
The DMP2010UFV-13 transistor is also designed to be able to withstand high temperature and high voltage applications. It has an operating temperature range of -40 to +150 Degrees Celsius and a breakdown voltage rating of 500V. Additionally, it has a rugged TO-220 package with zinc-plated leads to ensure reliable operation. Overall, it is a versatile device that can be used in a wide range of applications requiring high current and low on-state impedance.
In conclusion, the DMP2010UFV-13 is a transistor belonging to Transistors - FETs, MOSFETs - Single category. It is mainly used in applications that require low on-state impedance and high current carrying capacity, such as power supplies and DC-DC converters, motor control circuits, lighting control applications, audio amplifiers, low-power motor drivers, and high-speed switching applications. It works based on the depletion mode enhancement mode of operation and can withstand high temperature and high voltage applications. As such, the DMP2010UFV-13 is a versatile device with a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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DMP2010UFV-13 Datasheet/PDF