DMP2010UFV-13 Allicdata Electronics
Allicdata Part #:

DMP2010UFV-13-ND

Manufacturer Part#:

DMP2010UFV-13

Price: $ 0.16
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET P-CH 20V 50A POWERDI3333
More Detail: P-Channel 20V 50A (Tc) 2W (Ta) Surface Mount Power...
DataSheet: DMP2010UFV-13 datasheetDMP2010UFV-13 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.14935
Stock 1000Can Ship Immediately
$ 0.16
Specifications
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3350pF @ 10V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 3.6A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The DMP2010UFV-13 is a transistor that belongs in the category of Transistors - FETs, MOSFETs - Single. It is mainly used in applications that require low on-state impedance and high current carrying capacity. As a result, it has a wide range of applications: it can be used in power supplies and DC-DC converters, motor control circuits, lighting control applications, and even in audio amplifiers and other audio applications. It can also be used in low-power motor drivers, and even as a switch in high-speed switching applications.

The DMP2010UFV-13 is a insulated gate bipolar transistor (IGBT) that has a single die construction. This transistor uses an insulated gate to control the flow of current through the transistor, allowing for greater efficiency, lower on-state voltage drop and faster switching speeds. It also has a built-in reverse bias diode and a gate breaker diode, which help to limit the energy that can be dissipated in the transistor when voltage is reversed. The DMP2010UFV-13 also features an on-state current rating of up to 13 Amp with a BVCES of 500V.

The working principle of the DMP2010UFV-13 is based on the depletion mode enhancement mode of operation. The device consists of a vertically stacked pair of N-type and P-type semiconductor layers. When an external voltage is applied to the gate of the device, a negative charge will appear on the gate of the transistor. This negative charge causes the P-type material to become less conducting, thus allowing current to flow through the N-type layer. The amount of current that can flow is controlled by the voltage applied to the gate. As a result, the DMP2010UFV-13 transistor can be used to regulate current in a circuit.

The DMP2010UFV-13 transistor is also designed to be able to withstand high temperature and high voltage applications. It has an operating temperature range of -40 to +150 Degrees Celsius and a breakdown voltage rating of 500V. Additionally, it has a rugged TO-220 package with zinc-plated leads to ensure reliable operation. Overall, it is a versatile device that can be used in a wide range of applications requiring high current and low on-state impedance.

In conclusion, the DMP2010UFV-13 is a transistor belonging to Transistors - FETs, MOSFETs - Single category. It is mainly used in applications that require low on-state impedance and high current carrying capacity, such as power supplies and DC-DC converters, motor control circuits, lighting control applications, audio amplifiers, low-power motor drivers, and high-speed switching applications. It works based on the depletion mode enhancement mode of operation and can withstand high temperature and high voltage applications. As such, the DMP2010UFV-13 is a versatile device with a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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