DMP2004WK-7

Vgs(th) (Max) @ Id:	1V @ 250µA
Package / Case:	SC-70, SOT-323
Supplier Device Package:	SOT-323
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	250mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	175pF @ 16V
Vgs (Max):	±8V
Series:	--
Rds On (Max) @ Id, Vgs:	900 mOhm @ 430mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	400mA (Ta)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The DMP2004WK-7 is a MOSFET that has been designed to provide a high-voltage, high-current switching transistor for various applications. It is a single MOSFET (Metal Oxide Semiconductor Field Effect Transistor) with an operating range of 4.5 volts to 24 volts. It is suitable for a range of applications including automotive applications, medical devices and industrial applications.The DMP2004WK-7 MOSFET is a versatile, efficient and reliable device that offers a wide range of operation and capabilities. It is also particularly suitable for applications that need a robust, high-current, high-voltage switching transistor. The MOSFET has good temperature and voltage stability, very low static gate-source voltage, and very low gate-drain leakage current. These features make the DMP2004WK-7 MOSFET an ideal choice for a range of applications, such as those in automotive, medical and industrial settings.The MOSFET works on the principle of relying on an electric field to control electrical currents. This technology, also known as field-effect transistor (FET) technology, is used in electronic devices such as microprocessors, memory and data transmission circuits. The MOSFET is made of two insulated gate electrodes, a source and a drain. The source is connected to the positive side of the circuit, while the drain is connected to the negative. When a voltage is applied to the gate, it attracts electrons from the source and repels them from the drain. This creates a channel between the source and the drain, allowing electrical current to flow through. By varying the voltage applied to the gate, the current flowing through this channel can be controlled.The DMP2004WK-7 MOSFET has low on-state resistance, low gate-source voltage, and high drain-source breakdown voltage. Its on-state characteristics, temperature and voltage stability make it suitable for high-speed switching applications. Its high input impedance and low capacitance also makes it ideal for a range of other applications. Additionally, its low gate charge, low gate source leakage current, and high power handling capabilities allow it to be used in various applications like motor control, AC/DC converters, battery charging, and power distribution.The MOSFET is also available in a variety of packages, including the TO-220, TO-263, and TO-247. The total gate charge (TGC) of the MOSFET is especially valuable because it can help to reduce switching loss. Additionally, the MOSFET’s low input and output capacitance allows it to be used in systems that require fast switching speeds.The DMP2004WK-7 MOSFET is an ideal choice for applications that need a robust, high-current, high-voltage switching transistor. Its low on-state resistance, low gate-source voltage, and high drain-source breakdown voltage make it suitable for a wide range of applications, including automotive applications, medical devices, and industrial applications. Due to its high power handling capabilities, low gate charge, and low gate source leakage current, it is also a great choice for motor control, AC/DC converters, battery charging, and power distribution. Finally, its various packages, total gate charge, and low input and output capacitance make it an exceptional choice for systems that demand high-speed switching.

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