DMTH6016LSDQ-13 Allicdata Electronics

DMTH6016LSDQ-13 Discrete Semiconductor Products

Allicdata Part #:

DMTH6016LSDQ-13DITR-ND

Manufacturer Part#:

DMTH6016LSDQ-13

Price: $ 0.36
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET 2 N-CHANNEL 60V 7.6A 8SO
More Detail: Mosfet Array 2 N-Channel (Dual) 60V 7.6A (Ta) 1.4W...
DataSheet: DMTH6016LSDQ-13 datasheetDMTH6016LSDQ-13 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.32965
Stock 1000Can Ship Immediately
$ 0.36
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V
Power - Max: 1.4W, 1.9W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Description

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DMTH6016LSDQ-13 is a type of integrated circuit (IC) primarily used in power switching applications that includes 6 N-channel power MOSFETs in a space saved characteristic. It is one out of a range of discrete power MOSFET array devices produced by STMicroelectronics. Other types of devices have varying numbers of series and parallel internal transistors formed into an integrated package. DMTH6016LSDQ-13 is designed to save space by having the externally accessible transistors combined into a single package.This device Family consists of DMTH6016LSDQ, DMTH6016LSDQA and DMTH6016LSDQC-13.

This device is suitable for use as a gate driver in various gate driver and motor drive applications, and as a power switch in various high current applications. DMTH6016LSDQ-13 also has a low drain-source on-state resistance (RDS (ON)) of less than 18.4 mΩ and a low gate-source threshold voltage (VTH) of 1.2 V. It also has a maximum continuous drain-source voltage (VDS) of 75 V and a maximum continuous drain current (ID) of 500 mA.

Working principle of DMTH6016LSDQ-13 is based on the principle of conducting an electric current between two layers of insulation. MOSFETs provide a means of switching with minimal dissipation and a low threshold voltage. It also has low power dissipation and can switch quickly and accurately, which is why it is ideal for high-frequency power switching applications. This device consists of six N-Channel MOSFETs series connected internally, with a common gate, drain, and source. It has a low on-resistance, which translates to less power dissipation in high current applications, and the combination of the MOSFETs boosts the voltage capability of the device.

The primary application fields of DMTH6016LSDQ-13 are motor control, power switching, and gate drivers. It can be used in welding machine controllers, dc motor controllers, battery charger controllers, air conditioning system controllers, and automotive systems. DMTH6016LSDQ-13 can also be used in other applications that require high current, high frequency switching such as electronic lamp drivers and solenoid valve actuators.

In conclusion, DMTH6016LSDQ-13 is an integrated circuit primarily used in power switching applications and other high current applications due to its low RDS (ON), low VTH, high VDS, and high ID values. It has a common gate, drain, and source, and contains six N-Channel MOSFETs series connected internally.

The specific data is subject to PDF, and the above content is for reference

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