DMTH6016LSDQ-13 Discrete Semiconductor Products |
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| Allicdata Part #: | DMTH6016LSDQ-13DITR-ND |
| Manufacturer Part#: |
DMTH6016LSDQ-13 |
| Price: | $ 0.23 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | MOSFET 2 N-CHANNEL 60V 7.6A 8SO |
| More Detail: | Mosfet Array 2 N-Channel (Dual) 60V 7.6A (Ta) 1.4W... |
| DataSheet: | DMTH6016LSDQ-13 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.23200 |
| 10 +: | $ 0.22504 |
| 100 +: | $ 0.22040 |
| 1000 +: | $ 0.21576 |
| 10000 +: | $ 0.20880 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| FET Type: | 2 N-Channel (Dual) |
| FET Feature: | Standard |
| Drain to Source Voltage (Vdss): | 60V |
| Current - Continuous Drain (Id) @ 25°C: | 7.6A (Ta) |
| Rds On (Max) @ Id, Vgs: | 19.5 mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 864pF @ 30V |
| Power - Max: | 1.4W, 1.9W |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SO |
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DMTH6016LSDQ-13 is a type of integrated circuit (IC) primarily used in power switching applications that includes 6 N-channel power MOSFETs in a space saved characteristic. It is one out of a range of discrete power MOSFET array devices produced by STMicroelectronics. Other types of devices have varying numbers of series and parallel internal transistors formed into an integrated package. DMTH6016LSDQ-13 is designed to save space by having the externally accessible transistors combined into a single package.This device Family consists of DMTH6016LSDQ, DMTH6016LSDQA and DMTH6016LSDQC-13.
This device is suitable for use as a gate driver in various gate driver and motor drive applications, and as a power switch in various high current applications. DMTH6016LSDQ-13 also has a low drain-source on-state resistance (RDS (ON)) of less than 18.4 mΩ and a low gate-source threshold voltage (VTH) of 1.2 V. It also has a maximum continuous drain-source voltage (VDS) of 75 V and a maximum continuous drain current (ID) of 500 mA.
Working principle of DMTH6016LSDQ-13 is based on the principle of conducting an electric current between two layers of insulation. MOSFETs provide a means of switching with minimal dissipation and a low threshold voltage. It also has low power dissipation and can switch quickly and accurately, which is why it is ideal for high-frequency power switching applications. This device consists of six N-Channel MOSFETs series connected internally, with a common gate, drain, and source. It has a low on-resistance, which translates to less power dissipation in high current applications, and the combination of the MOSFETs boosts the voltage capability of the device.
The primary application fields of DMTH6016LSDQ-13 are motor control, power switching, and gate drivers. It can be used in welding machine controllers, dc motor controllers, battery charger controllers, air conditioning system controllers, and automotive systems. DMTH6016LSDQ-13 can also be used in other applications that require high current, high frequency switching such as electronic lamp drivers and solenoid valve actuators.
In conclusion, DMTH6016LSDQ-13 is an integrated circuit primarily used in power switching applications and other high current applications due to its low RDS (ON), low VTH, high VDS, and high ID values. It has a common gate, drain, and source, and contains six N-Channel MOSFETs series connected internally.
The specific data is subject to PDF, and the above content is for reference
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DMTH6016LSDQ-13 Datasheet/PDF