Allicdata Part #: | DMTH6004SCTDI-5-ND |
Manufacturer Part#: |
DMTH6004SCT |
Price: | $ 1.48 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET 60V 100A TO220-3 |
More Detail: | N-Channel 60V 100A (Tc) 2.8W (Ta), 136W (Tc) Throu... |
DataSheet: | DMTH6004SCT Datasheet/PDF |
Quantity: | 20 |
1 +: | $ 1.34820 |
50 +: | $ 1.08675 |
100 +: | $ 0.97808 |
500 +: | $ 0.76073 |
1000 +: | $ 0.63032 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 2.8W (Ta), 136W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4556pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 95.4nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 3.65 mOhm @ 100A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The DMTH6004SCT is a single N-channel MOSFET transistor designed to operate in both high and low side switching applications. It is available in a TO-220 power transistor package and can handle up to 40 volts of drain-source voltage. The DMTH6004SCT is capable of handling a maximum dry load power of 70 watts and a max empty load current of 4 amps at an ambient temperature of 25 °C. The maximum operating temperature of the DMTH6004SCT transistor is 125 °C. This transistor has been designed to be highly efficient and reliable with minimal power consumption, making it ideal for various applications.
The DMTH6004SCT transistor can be used in various applications such as DC/DC converters, LCD power supplies, automotive power systems, high/lowside switches and voltage regulators. The DMTH6004SCT uses an N-channel MOSFET architecture that allows it to have a low on-resistance compared to traditional switching transistors. This low on-resistance of the DMTH6004SCT makes it ideal for high power applications where energy efficiency is important.
The working principle behind the DMTH6004SCT transistor is based on the physics of a MOSFET structure. The gate terminal acts as the control input and controls the current that flows between the source and drain. When a voltage is applied to the gate terminal, electrons start to accumulate in the channel between the source and drain, thus creating a channel that allows current to flow from the source to the drain. When the voltage applied to the gate terminal is removed, the electrons in the channel are quickly discharged, thus turning off the current flow through the transistor.
In a high side switching application, the DMTH6004SCT is used to switch on the load. When the gate voltage is applied to the DMTH6004SCT, the N-channel MOSFET will turn on, allowing current to flow from the source to the load. When the load is switched off, the gate voltage applied to the DMTH6004SCT is removed, allowing the N-channel MOSFET to be quickly discharged and turn off. In a low side switch application, the DMTH6004SCT is used to switch on the input power source. When the gate voltage is applied to the DMTH6004SCT, the N-channel MOSFET will turn on, allowing current to flow from the input power source to the load. When the input power source is switched off, the gate voltage applied to the DMTH6004SCT is removed, allowing the N-channel MOSFET to be quickly discharged and turn off.
The DMTH6004SCT transistor is a highly efficient, reliable, and well-designed power switching device. Its low on-resistance characteristics make it ideal for highpower applications, and its high operating temperature range make it suitable for various applications. Its simplicity and long life make it an excellent choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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