Allicdata Part #: | DMTH8012LPSW-13-ND |
Manufacturer Part#: |
DMTH8012LPSW-13 |
Price: | $ 0.27 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 80V 53.7A POWERDI506 |
More Detail: | N-Channel 80V 53.7A (Tc) 3.1W (Ta) Surface Mount P... |
DataSheet: | DMTH8012LPSW-13 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.24561 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PowerDI5060-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1949pF @ 40V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 34nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 17 mOhm @ 12A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 53.7A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMTH8012LPSW-13 MOSFET, also known as a metal oxide silicon field effect transistor, is a type of unipolar field effect transistor developed and produced specifically for analog and digital signal-processing applications. These devices are available either in a through-hole (TO-220) version or a surface mountable version (MPSW8012). It is a 70V N-channel device with an operating drain-source voltage range of up to -50V, and a maximum drain current of 8A.
The application fields of DMTH8012LPSW-13 MOSFETs include motor control, power converters and switching circuits. These devices are used in wide application areas like consumer and industrial products, such as computers, game consoles, networking equipment, industrial automation, and automotive electronics. DMTH8012LPSW-13 MOSFETs are also used in telecom power amplifiers, power switch modules, remote radio base station power amplifiers, and local oscillator and mixer circuits.
The working principle of the DMTH8012LPSW-13 MOSFET is based on the relationship between the voltage applied to the gate and the resulting drain current. When a positive voltage is applied to the gate, the quantity of electrons in the channel between the source and the drain increases. This increases the current carried by the drain, which is proportional to the applied gate voltage. As the source voltage increases, the drain current will increase accordingly, as long as the gate voltage remains within its rated operating range. Conversely, if the source voltage decreases, the drain current decreases.
DMTH8012LPSW-13 MOSFETs offer several advantages compared to other types of transistors. Firstly, since the gate voltage controls the flow of current, the MOSFET power dissipation is low in comparison. Secondly, their high input impedance reduces capacitive load effects, allowing for improved noise margin. Lastly, their small size and low cost make them ideal for use in a wide range of applications.
Overall, the DMTH8012LPSW-13 MOSFET is an ideal choice for analog and digital signal-processing applications, providing excellent performance and reliable operation over a wide range of applications. Its low power dissipation, high input impedance, and low cost make it an attractive choice for a broad range of applications.
The specific data is subject to PDF, and the above content is for reference
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