DMTH6004SK3Q-13

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-252-5, DPak (4 Leads + Tab), TO-252AD
Supplier Device Package:	TO-252-4L
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.9W (Ta), 180W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4556pF @ 30V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	95.4nC @ 10V
Series:	Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs:	3.8 mOhm @ 90A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	100A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The DMTH6004SK3Q-13 is an advanced single field-effect transistor (FET) that is made with a depleted mode MOSFET. It is especially used in high-frequency power conversion applications and is preferred by many engineers due to its unique combination of high performance, cost-efficiency, and reliable operation.The DMTH6004SK3Q-13 MOSFET utilizes advanced manufacturing processes to make the device small and lightweight. It operates using a high voltage of up to 600V and has a current output of 4A. This device also features a low RDS (on) of 2.7 mOhm and a low capacitance of 15 pF, allowing for higher efficiencies when used in different applications.The DMTH6004SK3Q-13 device is capable of providing fast switching for high-frequency power conversion applications. This transistor is also designed to minimize tripping in heavy surge current circuits. Its low on-resistance ensures reliable operation and high efficiency under heavy load conditions. Furthermore, the DMTH6004SK3Q-13 features a low gate charge, making it easy to use and maintain.The DMTH6004SK3Q-13 is ideally suited for use in applications such as switching power supply, DC-DC converters, Class-D audio amplifiers, and other high-frequency power applications. This FET transistor also features a high power output and is capable of handling large current spikes. It is also capable of providing high-frequency operation and high-resolution pulse width modulation (PWM) control.The DMTH6004SK3Q-13 ensures reliable switch latency and response time with its advanced design, allowing for smooth and efficient operations. The device is also designed for low energy consumption and is suitable for battery-powered Radio Frequency (RF) applications.Working principleThe DMTH6004SK3Q-13 is a FET with an operating principle based on the semiconductor material’s ability to allow or block current based on a gate voltage. In this device, a gate voltage is applied to a source and a drain from the gate terminal. This gate voltage enables the device to be enabled (ON) or disabled (OFF).When the gate voltage applied is high, the device is enabled and current flows freely between the source and the drain terminals. Conversely, when the gate voltage is low, the device is disabled, and the current does not flow. The DMTH6004SK3Q-13 also has an internal resistance when current flows through it, and this is referred to as its on-resistance.The DMTH6004SK3Q-13 is designed with an integral body diode to protect against reverse-bias voltage. The diode provides a fast path for current to flow during unexpected high-voltage reversals and ensures reliable performance.ConclusionThe DMTH6004SK3Q-13 is an advanced single field-effect transistor (FET) that is made with a depleted mode MOSFET. It is a high-frequency power conversion transistor, ideal for switching power supplies, DC-DC converters, Class-D audio amplifiers, and other RF applications. The DMTH6004SK3Q-13 features high power output, low on-resistance, low gate charge, and fast switching, making it suitable for a wide variety of applications. The device also has an integrated diode, which enables it to protect against unexpected high-voltage reversals, providing reliable performance and power efficiency.

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