DMTH4007LPSQ-13

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	8-PowerTDFN
Supplier Device Package:	PowerDI5060-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	2.7W (Ta), 150W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1895pF @ 30V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	29.1nC @ 10V
Series:	Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs:	6.5 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	15.5A (Ta), 100A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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DMTH4007LPSQ-13 Application Field and Working Principle

The DMTH4007LPSQ-13 (DMTH) is a single, N-Channel field-effect transistor (FET) used in a variety of applications. It is designed with a drain-to-source voltage (VDS) of 40 volts and a maximum drain-source current (ID) of 7 amperes. This DMTH is suitable for a wide range of applications including power management, voltage regulation, or switching applications.

Overview

This DMTH feature a rated drain-to-source breakdown (BVDSS) of 40 volts and a maximum drain-source on-state resistance (RDS(ON)) of 0.0075 Ohms. It has a low threshold voltage (VGS(th)) of 1.3 volts and an internal thermal-overload protection. It has an impedance voltage rating of 13 V and a package size of PSQ-T13.The DMTH has a low-threshold voltage and provides low-noise performance in the entire drain-source range. It meets UL 94V0 certification and is also RoHS compliant. It also provides excellent reliability and safe operation with a maximum junction temperature (Tj) of 175 degrees Celsius.

Applications

The DMTH is typically used for power management, voltage regulation, or switching applications. It can be used in a wide range of fields including automotive, industrial, appliances, and communication systems. It is suitable for controlling the switch in power supplies, motor speed control circuits, DC-DC converters, and audio amplifiers.

Working Principle

The DMTH functions similarly to other FETs in that its operation is based on the charging and discharging of the gate terminal. When a positive voltage is applied to the gate terminal (VGS), the channel is opened and allows current to flow. The amount of current that is allowed to flow is determined by the voltage applied on the gate terminal. When the gate voltage drops below the threshold voltage (VGS(th)), the channel is closed and current stops flowing.The DMTH is configured as an N-channel FET, meaning it is constructed with an N-type semiconductor material for the channel. This provides a low-threshold voltage, enabling the device to operate at lower voltage levels. This makes it suitable for applications where power savings are important, such as in power supplies or motor speed control circuits.

Conclusion

The DMTH is a single, N-Channel field-effect transistor that is suitable for a wide range of applications including power management, voltage regulation, or switching. It features a low-threshold voltage, low-noise performance, UL 94V0 certification, and RoHS compliance. It can be used in a variety of fields such as automotive, industrial, appliances, and communication systems. The DMTH functions similarly to other FETs in that its operation is based on the charging and discharging of the gate terminal.

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