Allicdata Part #: | DMTH10H005LCT-ND |
Manufacturer Part#: |
DMTH10H005LCT |
Price: | $ 1.61 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 100V 140A TO220AB |
More Detail: | N-Channel 100V 140A (Tc) 187W (Tc) Through Hole TO... |
DataSheet: | DMTH10H005LCT Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 1.44900 |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 187W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3688pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 114nC @ 10V |
Series: | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs: | 5 mOhm @ 13A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 140A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The DMTH10H005LCT is an N-channel enhancement-mode FET (Field Effect Transistor) manufactured by Diodes Incorporated. It consists of a high-resistance channel between the drain and source and is commonly used as a voltage-controlled switch to transfer electronic signals across various applications. Being an N-channel device, the DMTH10H005LCT features high input impedance, low output impedance, as well as high-speed switching capabilities. In this article, we’ll look at the common application fields and working principles of the DMTH10H005LCT.
Application Fields
The DMTH10H005LCT is primarily used in applications where switching and level shifting are required. Common fields in which this device is employed are:
- Power management
- DC-DC converters
- Audio amplifiers
- Motor controllers
- Automotive electronics
- Telecommunications
- Switching regulators
- Lighting systems
The DMTH10H005LCT is also suitable for use in a variety of industrial applications such as inertial navigation, positional tracking, servo systems, seismic sensors, and energy harvesting. Additionally, this device can be used in multiple series and parallel configurations, which make it a versatile component.
Working Principle
The DMTH10H005LCT operates on the principle of the electric field effect. It consists of a source terminal, a drain terminal, and a gate. As the electric field between the source and the drain is varied, the resistance between them also varies. The circuit is designed to control the resistance between the source and drain by adjusting the voltage applied to the gate.
When a positive voltage is applied to the gate, a conducting channel is created between the source and the drain. This is known as an “enhancement-mode” of operation as the resistance between the two terminals is decreasing. On the other hand, applying a negative voltage to the gate reduces the resistance between the terminals, which is known as “depletion-mode” of operation. The effect of the applied voltages on the resistance is known as the “field effect.”
The DMTH10H005LCT also features protection against ESD (Electrostatic Discharge). This is done by adding a power diode and by-pass capacitors in the package. The diode is connected to the source and acts as a buffer between the source and the gate. The capacitors help dissipate any electric charge that may be built up on the transistor and protect it against ESD.
The DMTH10H005LCT is an enhancement-mode transistor that uses a high-resistance channel between the source and the drain. It is capable of providing fast-switching capabilities and is suitable for a variety of applications. The device also features ESD protection and is used to transfer electronic signals across various fields.
The specific data is subject to PDF, and the above content is for reference
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