
DMTH8012LPS-13 Discrete Semiconductor Products |
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Allicdata Part #: | DMTH8012LPS-13DITR-ND |
Manufacturer Part#: |
DMTH8012LPS-13 |
Price: | $ 0.35 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 80V 9.5A PWRDI5060-8 |
More Detail: | N-Channel 80V 10A (Ta), 72A (Tc) 2.6W (Ta), 136W (... |
DataSheet: | ![]() |
Quantity: | 1000 |
2500 +: | $ 0.31240 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PowerDI5060-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 2.6W (Ta), 136W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1949pF @ 40V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 34nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 17 mOhm @ 12A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Ta), 72A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMTH8012LPS-13 is an N-channel enhancement-mode field effect transistor designed to provide high levels of performance and reliability in harsh operating conditions. It is one of the most advanced products on the market and offers long term reliability, thermal performance, and low voltage operation. This device is ideal for applications in highly demanding and power hungry environments. It is suitable for use in military and space applications.
The DMTH8012LPS-13 provides exceptional performance when used in harsh operating conditions, such as high temperatures and high voltage. It features a low on-resistance and an industry-leading maximum current rating of 4.5 Amps while operating at a temperature range of -55°C to 150°C. It also offers a low input capacitance and ESD protection up to 2kV. The device is RoHS compliant and AEC-Q101 qualified.
The DMTH8012LPS-13 has a dual-gate configuration with drain and source pins connected to the gates. This configuration provides improved control and stability of the transistor compared to single-gate configurations. The drain and source pins each have a maximum drain-source voltage (D-S) rating of 16 volts and maximum drain current of 4.5 Amps. It also has a low gate threshold voltage (Vth) of about -3.3V and an on-state resistance (RdsOn) value of 10mohm.
The working principle of the DMTH8012LPS-13 is based on field-effect transistor (FET) technology. It utilizes an insulated gate that can be used to control the current flow between the source and drain of the device. When a positive voltage is applied to the gate, carriers such as electrons or holes are induced around the gate. This creates an electric field, which modulates the current flow between the source and drain, providing the desired on-state and off-state properties of the device.
The DMTH8012LPS-13 is designed to be used in a variety of applications, including power regulators, DC-DC converters, load switches, Amplifiers, and other analog circuits. It is also suitable for use in power converters, power mosfets, linear regulators, and switching regulators, as well as in automotive, industrial, and consumer electronics. The device can be used in automobiles, aircraft, and other avionics for power supplies and the like.
The DMTH8012LPS-13 from ON Semi-conductor is a reliable solution for hostile operating areas which puts it at the top of its class and offers superior quality performance. Its features make it an ideal choice for harsh operating conditions and its low on-resistance ensures high levels of performance and reliability. As a single gate field effect transistor, it can provide excellent power switching and amplification capabilities. Its low voltage operation and thermal performance guarantee enduring reliability and long-term operation.
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