DMTH6016LPSQ-13

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The DMTH6016LPSQ-13 is a depletion-mode insulated-gate Field Effect Transistor (IGFET). It is a monolithic MOSFET device fabricated with a Dual-Level Integrated Technology which provides low power high performance in a very small outline form factor.

The DMTH6016LPSQ-13 is designed for power switching and amplifier applications and offers a wide range of features, such as low power consumption, high noise immunity, short rise and fall times, high input impedance, and low threshold voltage. The device has been optimized for applications in the 5V to 12V supply range and is capable of operating in temperatures from -65°C to 150°C.

The device has a double-gate structure which offers the advantage of lower gate-drain capacitance above the threshold. This reduces the Miller Effect and increases the stability of the device when comparing other MOSFETs of similar voltage ratings. The metal-oxide-semiconductor structure also ensures a low on-state resistance and high frequency operation.

The DMTH6016LPSQ-13 has a P-channel MOSFET type and a positive drain-source voltage, which can typically operate at voltage levels up to 20V. The device is equipped with both an enable gate and an inhibit gate, which are connected to the main gate via an insulated gate. The main gate electrode is connected to the bias voltage and a voltage applied between the enable and the inhibit gates can switch the device on or off.

When the device is in the off state, no current flows through the drain and the source. The enable or inhibit gate voltage must be greater than or equal to the threshold voltage to switch the device from off to on. The DMTH6016LPSQ-13 is also able to maintain its on-state even when the supply voltage is below the threshold voltage. This is because the device has a negative body effect and a low threshold voltage in this region.

The P-channel MOSFET type of the DMTH6016LPSQ-13 makes it suitable for a wide range of applications such as switching and amplifier circuits, audio power amplifier systems, power supply circuits, communication systems, LED lighting circuits, and motion control ports. Its low on-resistance and high-frequency operation make it an ideal choice for power switching applications.

The DMTH6016LPSQ-13 is an excellent choice for low-power and high-performance applications. The device offers low power consumption and high noise immunity, short rise and fall times, high input impedance, and low threshold voltage, as well as the ability to operate in extreme temperatures. With its double-gate structure and metal-oxide-semiconductor structure, it provides reliable performance in demanding conditions.

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