Allicdata Part #: | DMTH4011SPDQ-13DITR-ND |
Manufacturer Part#: |
DMTH4011SPDQ-13 |
Price: | $ 0.33 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFETDUAL N-CHANPOWERDI5060-8 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 40V 11.1A (Ta), 42... |
DataSheet: | DMTH4011SPDQ-13 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.29922 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 11.1A (Ta), 42A (Tc) |
Rds On (Max) @ Id, Vgs: | 15 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 10.6nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 805pF @ 20V |
Power - Max: | 2.6W (Ta) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PowerDI5060-8 |
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The DMTH4011SPDQ-13 is a transistors - FETs, MOSFETs - Arrays product offered by ON Semiconductor. This is a silicon-on-insulator (SOI) technology designed to provide an extremely low ON resistance device and impressive rate of ON/OFF switching, while also providing excellent latch immunity and low capacitance. This device is designed with a vertical DMOS structure, allowing it to be exceptionally small, while still providing a high current carrying capacity and a wide range of operating voltages.
The main application fields of this device include low-side switching in AC power applications, as well as control, low voltage and feature-rich applications. It is also used for automotive, home appliance, computer peripheral and consumer applications, as well as lighting and industrial control applications.
Working Principle
The DMTH4011SPDQ-13 works on the principle of vertical DMOS (VDMOS) technology. A VDMOS transistor consists of several vertical cell regions, with each of the cells connected at the base of the layer beneath it. Electrons are then drawn from the base through the cell regions, creating a channel between the source and drain contacts.
When the gate and source contacts are in the same electrical state, the electrons will pass through the source/drain channel and create an ON state in which current can flow between them. When the gate is pulsed opposite the source/gate, it will prevent current from flowing through the channel and creating an OFF state. This is what allows the device to operate as a programmable switch.
The device also has an impressive latch immunity, which means that when an OFF input is sent to the gate, the device will remain in its OFF state, even if the input returns to its original ON state.
The DMTH4011SPDQ-13 also features a wide range of operating voltages, with a minimum voltage of 10 V, and a maximum voltage of 30 V. This allows it to be used in a variety of applications, including those which require high-power switching.
Conclusion
In conclusion, the DMTH4011SPDQ-13 is an ideal solution for a wide range of applications, offering an extremely low ON resistance, an impressive rate of ON/OFF switching, excellent latch immunity, and a wide range of operating voltages. It works on the principle of VDMOS technology, and is an excellent choice for low-side switching in AC power applications, as well as control, low voltage and feature-rich applications.
The specific data is subject to PDF, and the above content is for reference
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