| Allicdata Part #: | DMTH10H010LCTDI-5-ND |
| Manufacturer Part#: |
DMTH10H010LCT |
| Price: | $ 1.23 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | MOSFET 100V 108A TO220AB |
| More Detail: | N-Channel 100V 108A (Tc) 2.4W (Ta), 166W (Tc) Thro... |
| DataSheet: | DMTH10H010LCT Datasheet/PDF |
| Quantity: | 160 |
| 1 +: | $ 1.12140 |
| 50 +: | $ 0.90569 |
| 100 +: | $ 0.81509 |
| 500 +: | $ 0.63394 |
| 1000 +: | $ 0.52526 |
| Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 2.4W (Ta), 166W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2592pF @ 50V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 53.7nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 9.5 mOhm @ 13A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 108A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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DMTH10H010LCT is a subminiature power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) in a hermetically sealed TO-252 surface mount package. This component is useful in a wide range of applications and offers excellent electrical, thermal and mechanical properties. As a power MOSFET, DMTH10H010LCT has a higher voltage and current handling capacity than its analog counterparts.
This component is designed for use in a broad range of applications, from power supplies and motor control, to pulse width modulation and switching. Due to its low parasitic capacitances and gate charge, DMTH10H010LCT is capable of switching currents of up to 150 mA at operating voltages of up to 50 V. Additionally, the component features a low drain-source on-state resistance of 0.03 ohm and a low gate-source threshold voltage of 4.95 V, making it suitable for a variety of high power applications.
The basic operating principle of DMTH10H010LCT is that of a three-terminal, vertical-channel, junction field-effect transistor. In this component, the source and drain are connected together on the bottom side of the package. The top of the device contains the gate, which is an insulated metal plate that blocks current. As a voltage is applied to the gate terminal, it attracts carriers to the surface of the substrate, and a channel is formed through which current can flow. As more voltage is applied to the gate, more carriers are attracted to the channel, thus increasing the current through the channel.
DMTH10H010LCT also features a variety of protection technologies, ensuring that the component can operate safely and efficiently in a variety of environmental conditions. The component has a 100 percent avalanche energy rated for pulse testing for up to 100 µs. It also has full over-current and over-temperature protection to minimize the risk of component damage.
Overall, DMTH10H010LCT is a reliable, robust, and powerful MOSFET designed to be used in a variety of applications. Its low on-state resistance, low gate-source threshold voltage, and its advanced protection technologies make it ideally suited for use in a variety of high power applications, such as motor control, power supplies, and pulse width modulation and switching.
The specific data is subject to PDF, and the above content is for reference
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DMTH10H010LCT Datasheet/PDF