DMTH4004LK3-13

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DMTH4004LK3-13 is a four-terminal semiconductor device that belongs to the family of field effect transistors (FETs). It is a single, drain voltage-controlled MOSFET that is designed for high speed and low-cost applications.

This MOSFET is powered from an array of drain, source, and gate connections. It is available in a lead-free (LF) surface mount package, allowing for extremely compact design in high-power applications. This FET offers high-frequency switching ability and temperature stability. It is isolated in the package to improve circuit isolation and reduce leakage.

The Drain-Source Voltage (VDS) of this FET is rated for 30 volts, and the Drain-Source currents (IDSS) up to 15 Amps. The on-resistance (RON) is an impressive 0.01 Ohms, and its breakdown voltage (BV) is an even more impressive 600 volts. These highly specific characteristics make this one of the best FETs available for high-speed, low-cost applications.

The working principle of this FET is all based on the relationship between its on-resistance (RON) and drain voltage (VDS). When the voltage on the gate connection is held at a constant potential, the resistance between the drain and source connection will vary based on the voltage applied to the channel between them. When the gate voltage reaches a certain point, the transistor is switched on and current flows between the drain and source connections.

When the voltage of the FET is higher than the gate threshold voltage, the transistor is in an ON state. This state is called the Enhancement mode. At this state, the RON of the FET is at its lowest, meaning current is allowed to flow freely between the source and the drain connections. The RON of this FET is extremely low, meaning more current can flow through it at a given voltage.

The DMTH4004LK3-13 FET is mainly used for high-speed switching application in power supplies, invertors, switches, and lighting circuits. It is ideal for high-energy applications, with its high drain-source breakdown voltage and low on-resistance. This FET is also capable of high-frequency switching, which makes it well-suited for high-voltage applications, where fast switching and low resistance are necessary.

In conclusion, the DMTH4004LK3-13 is an excellent type of FET for applications requiring high-speed, low-cost solutions. Its high drain-source breakdown voltage and low on-resistance makes it ideal for high-power applications, while its ability to handle high-frequency switching makes it a great choice for high-voltage applications. This FET is widely used for power supplies, inverters, switches, and lighting circuits, and is the perfect choice for applications needing efficient, fast switching solutions.

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